MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 ISO FULL PACK IN LINE D/C:TO-220
STF21NM60N, STF22NM60, STF24NF12 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO 220 ISO FULL PACK IN LINE
D/C: TO-220
Description: MOSFET N-CH 600V 17A TO-220FP
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PDF/DataSheet Download
Datasheet: STF10NK50Z
File Size: 222084 KB
Manufacturer: ST
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STF22NM60
File Size: 395870 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STF24NF12
File Size: 258048 KB
Manufacturer: ST
Download : Click here to Download
| Technical/Catalog Information | STF21NM60N |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 220 mOhm @ 8.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1900pF @ 50V |
| Power - Max | 30W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 66nC @ 10V |
| Package / Case | TO-220-3 Full Pack (Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STF21NM60N STF21NM60N 497 5004 5 ND 49750045ND 497-5004-5 |
This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs. The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall performances that are significantly better than that of similar competition's products.
| Symbol | Parameter |
Value |
Unit | ||
| STP22NM60 STB22NM60/1 |
STF22NM60 |
STW22NM60 | |||
| VDS | Drain-source Voltage (VGS = 0) |
600 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
600 |
V | ||
| VGS | Gate- source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuos) at TC = 25 |
22 |
22(*) |
22 |
A |
| ID | Drain Current (continuos) at TC = 100 |
12.6 |
12.6(*) |
12.6 |
A |
| IDM() | Drain Current (pulsed) |
80 |
80(*) |
80 |
A |
| PTOT | Total Dissipation at TC = 25 |
192 |
45 |
210 |
W |
| Derating Factor |
1.2 |
0.36 |
1.2 |
W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope |
15 |
V/ns | ||
| VISO | Insulation Withstand Voltage (DC) |
- |
2500 |
-
|
V |
| Tstg | Storage Temperature |
-65 to 150 |
|||
| Tj |
Max. Operating Junction Temperature |
150 |
|||
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
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