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STF3NK100Z, STF3NK80Z, STF40NF06

Table of contents:
Info of STF3NK100Z
Info of STF3NK80Z
Info of STF40NF06

STF3NK100Z, STF3NK80Z, STF40NF06 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO 220 ISO FULL PACK IN LINE D/C:06+07+pb-free

STF3NK100Z, STF3NK80Z, STF40NF06 Datasheet download

Five Points

Part Number: STF3NK100Z

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: TO 220 ISO FULL PACK IN LINE

D/C: 06+07+pb-free

Description: MOSFET N-CH 60V 23A TO220FP

Price Break

1
10
100
250
500
1000
2500

Unit Price

3.19000
2.97000
2.31000
1.87000
1.59500
1.48500
1.40800

Extended Price

3.19
29.70
231.00
467.50
797.50
1485.00
3520.00

(All prices are in USD) Prices for reference only

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STF3NK100Z Parameters

Technical/Catalog Information	STF3NK100Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	6 Ohm @ 1.25A, 10V
Input Capacitance (Ciss) @ Vds	601pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF3NK100Z STF3NK100Z 497 7473 5 ND 49774735ND 497-7473-5

STF3NK80Z Parameters

Technical/Catalog Information	STF3NK80Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 1.25A, 10V
Input Capacitance (Ciss) @ Vds	485pF @ 25V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF3NK80Z STF3NK80Z 497 4342 5 ND 49743425ND 497-4342-5

STF3NK80Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STF3NK80Z Maximum Ratings

Symbol	Parameter	Value			Unit
		STP3NK80Z	STF3NK80Z	STD3NK80Z STD3NK80Z-1
V_DS	Drain-source Voltage (V_GS= 0)	800			V
V_DGR	Drain-gate Voltage (R_GS = 20 k)	800			V
V_GS	Gate- source Voltage	±30			V
I_D	Drain Current (continuos) at T_C = 25	2.5	2.5(*)	2.5	A
I_D	Drain Current (continuos) at T_C = 100	1.57	1.57(*)	1.57	A
I_DM ^(`)	Drain Current (pulsed)	10	10(*)	10	A
P_tot	Total Dissipation at T_C = 25	70	25	70	W
	Derating Factor	0.56	0.2	0.56	W/
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	3000			V
dv/dt ⁽¹⁾	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	-	2500	-	V
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD2.5A, di/dt 200A/µs, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed

STF3NK80Z Features

` TYPICAL R_DS(on) = 3.8
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY

STF3NK80Z Typical Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
· LIGHTING

STF40NF06 Parameters

Technical/Catalog Information	STF40NF06
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	28 mOhm @ 11.5A, 10V
Input Capacitance (Ciss) @ Vds	920pF @ 25V
Power - Max	30W
Packaging	Tube
Gate Charge (Qg) @ Vgs	32nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF40NF06 STF40NF06 497 4343 5 ND 49743435ND 497-4343-5

STF40NF06 General Description

This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STF40NF06 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CES	Collector-Emitter Voltage (V_GS= 0)	60	V
V_ECR	Emitter-Collector Voltage	60	V
V_GE	Gate-Emitter Voltage	± 20	V
I_C	Collector Current (continuous) at T_c= 25 ^oC	23	A
I_C	Collector Current (continuous) at T_c= 100 ^oC	16	A
I_CM(•)	Collector Current (pulsed)	92	A
P_tot	Total Dissipation at T_c= 25 ^oC	30	W
	Derating Factor	0.2	W/^oC
d_v/dt(1)	Peak Diode Recovery voltage slope	10	V/ns
E_AS(2)	Single Pulse Avalanche Energy	250	mJ
V_ISO	Insulation Withstand Voltage (DC)	2500	V
T_stg	Storage Temperature	65 to 150 150	^oC ^oC
T_j	Max.Operating Junction Temperature	65 to 150 150	^oC ^oC

STF40NF06 Features

TYPICAL RDS(on) = 0.024
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE AT 100°C
APPLICATION ORIENTED CHARACTERIZATION
100% AVALANCHE TESTED

STF40NF06 Typical Application

DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS

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