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The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™products.
HIGH CURRENT,HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC LIGHTING
STF6NK70Z General Description
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
STF6NK70Z Maximum Ratings
Symbol
Parameter
Value
Unit
STP6NK70Z
STF6NK70Z
VDS
Drain-source Voltage (VGS = 0)
700
V
VDGR
Drain-gate Voltage (RGS = 20 kW)
700
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
5
5 (*)
A
ID
Drain Current (continuos) at TC = 100°C
3.15
3.15 (*)
A
IDM ()
Drain Current (pulsed)
20
20(*)
A
PTOT
Total Dissipation at TC = 25°C
110
30
W
Derating Factor
0.87
0.24
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K)
4000
V
dv/dt (1)
Peak Diode Recovery voltage slope
4.5
V/ns
VISO
Insulation Withstand Voltage (DC)
-
2500
V
Tj
Tstg
Operating Junction Temperature Storage Temperature
-55 to 150 -55 to 150
°C
°C
STF6NK70Z Features
TYPICAL RDS(on) = 1.5 EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
STF6NK70Z Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC