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STF817A, STF8A60, STF8NK100Z

Table of contents:
Info of STF817A
Info of STF8A60
Info of STF8NK100Z

STF817A, STF8A60, STF8NK100Z Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOT-89 D/C:07+

STF817A, STF8A60, STF8NK100Z Datasheet download

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Part Number: STF817A

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOT-89

D/C: 07+

Description: MOSFET N-CH 1000V 6.5A TO220FP

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STF817A Parameters

Technical/Catalog Information	STF817A
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1.5A
Power - Max	1.4W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	50MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Surface Mount
Package / Case	SOT-89-3, TO-243-3
Packaging	Digi-Reel?
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF817A STF817A 497 4345 6 ND 49743456ND 497-4345-6

STF8A60 General Description

This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.

This device is approved to comply with applicable requirements by Underwriters Laboratories Inc.

STF8A60 Maximum Ratings

Symbol	Parameter	Condition	Ratings	Units
V_DRM	Repetitive Peak Off-State Voltage		600	V
I_T(RMS)	R.M.S On-State Current	T_C = 89 °C	8.0	A
I_TSM	Surge On-State Current	One Cycle, 50Hz/60Hz,Peak, Non-Repetitive	80/88	A
I²t	I²t		32	A²s
P_GM	Peak Gate Power Dissipation		5.0	W
P_G(AV)	Average Gate Power Dissipation		0.5	W
I_GM	Peak Gate Current		2.0	A
V_GM	Peak Gate Voltage		10	V
V_ISO	Isolation Breakdown Voltage(R.M.S.)	A.C. 1 minute	1500	V
T_J	Operating Junction Temperature		- 40 ~ 125	°C
T_STG	Storage Temperature		- 40 ~ 150	°C
	Mass		2.0	g

STF8A60 Features

Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( IT(RMS)= 8 A )
High Commutation dv/dt
Isolation Voltage ( VISO = 1500V AC )

STF8NK100Z Parameters

Technical/Catalog Information	STF8NK100Z
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1000V (1kV)
Current - Continuous Drain (Id) @ 25° C	6.5A
Rds On (Max) @ Id, Vgs	1.85 Ohm @ 3.15A, 10V
Input Capacitance (Ciss) @ Vds	2180pF @ 25V
Power - Max	40W
Packaging	Tube
Gate Charge (Qg) @ Vgs	102nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF8NK100Z STF8NK100Z 497 5007 5 ND 49750075ND 497-5007-5

STF8NK100Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STF8NK100Z Maximum Ratings

Symbol	Parameter	Value		Unit
Symbol	Parameter	TO-220	TO-220FP	Unit
V_DS V_DGR V_GS	Drain-source Voltage (VGS=0) Drain-gate Voltage Gate-Source Voltage	1000 1000 ± 30		V V V
I_D Note 1 I_D I_DM Note 2 P_TOT	Drain Current (continuous) at T_C = 25°C Drain Current (continuous) at T_C= 100°C Drain Current (pulsed) Total Dissipation at T_C = 25°C Derating Factor	6.5 4.3 16 160 1.28	6.5 4.3 16 40 0.32	A A A W W/°C
V_ESD(G-S) dv/dt Note 3	Gate source ESD (HBM-C=100pF, R=1.5K) Peak Diode Recovery voltage slope	4000 4.5		V V/ns
V_ISO	Insulation Withstand Voltage (DC)	--	2500	V
T_j T_stg	Operating Junction Temperature Storage Temperature	-55 to 150		°C

STF8NK100Z Features

EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE RATED
IMPROVED ESD CAPABILITY
VERY LOW INTRINSIC CAPACITANCE

STF8NK100Z Typical Application

HIGH CURRENT,SWITCHING APPLICATION
IDEAL FOR OFF-LINE POWER SUPPLIES

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