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STF9NK90, STF9NK90Z, STF9NM50N

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Info of STF9NK90
Info of STF9NK90Z
Info of STF9NM50N

STF9NK90, STF9NK90Z, STF9NM50N Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO

STF9NK90, STF9NK90Z, STF9NM50N Datasheet download

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Part Number: STF9NM50N

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 09+

D/C: TO

Description: MOSFET N-CH 500V 7.5A TO-220FP

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STF9NK90Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

STF9NK90Z Maximum Ratings

Symbol	Parameter	Value			Unit
		STP9NK90Z	STF9NK90Z	STW9NK90Z
V_ds	Drain-source Voltage (V_GS= 0)	900			V
V_DGR	Drain-gate Voltage (R_GS= 20 kW)	900			V
V_GE	Gate-Emitter Voltage	±30			V
I_D	Collector Current (continuous) at T_C = 25°C	8	8 (*)	8	A
I_D	Collector Current (continuous) at T_C = 100°C	5	5 (*)	5	A
I_DM(•)	Collector Current (pulsed)	32	32 (*)	32	A
_PTOT	Total Dissipation at T_C= 25°C	160	40	160	W
	Derating Factor	1.28	0.32	1.28	W/°C
V_ESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KW)	4			KV
d_{v/dt (1)}	Peak Diode Recovery voltage slope	4.5			V/ns
V_ISO	Insulation Withstand Voltage (DC)	--	2500	--	V
T_j T_stg	Operating Junction Temperature Storage Temperature	55 to 150 55 to 150			^oC

STF9NK90Z Features

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STF9NK90Z Typical Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES
DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

STF9NM50N Parameters

Technical/Catalog Information	STF9NM50N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	560 mOhm @ 3.7A, 10V
Input Capacitance (Ciss) @ Vds	570pF @ 50V
Power - Max	25W
Packaging	Tube
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	TO-220-3 Full Pack (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STF9NM50N STF9NM50N 497 7476 5 ND 49774765ND 497-7476-5

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