MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+
STS11NF3LL, STS12NF30L, STS12NH3LL Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOP8
D/C: 08+
Description: MOSFET N-CH 30V 12A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS11NF3LL
File Size: 46045 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS12NF30L
File Size: 84705 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS12NH3LL
File Size: 182698 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
11 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
7 |
A |
|
IDM(`) |
Drain Current (pulsed) |
44 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
| Technical/Catalog Information | STS12NF30L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 2400pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS12NF30L STS12NF30L 497 3223 1 ND 49732231ND 497-3223-1 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
12 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
7.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
48 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
| Technical/Catalog Information | STS12NH3LL |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 12A |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 6A, 10V |
| Input Capacitance (Ciss) @ Vds | 965pF @ 25V |
| Power - Max | 2.7W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 12nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS12NH3LL STS12NH3LL 497 4122 2 ND 49741222ND 497-4122-2 |
The STS12NH3LL is based on the latest generation of ST's proprietary "STripFET™" technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in highfrequency DC-DC converters. It's therefore ideal for high-density converters in Telecom and Computer applications.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 16 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
12 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
7.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
48 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
|
Tstg |
Storage Temperature |
-55 to 150
|
|
|
Tj |
Max. Operating Junction Temperature |
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