STS10PF30L

Mounting Style : SMD/SMT
Package / Case : SO-8
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : - 30 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 0.014 Ohms


Features:

TYPICAL RDS(on) = 0.012 Ω
STANDARDOUTLINEFOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
LOW THRESHOLD DRIVE


Application

BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
LOAD SWITCH


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-Source Voltage	± 16	V
ID	Drain Current (continuous) at Tc = 25	10	A
ID	Drain Current (continuous) at Tc = 100	6	A
IDM(`)	Drain Current (pulsed)	40	A
PTOT	Total Dissipation at Tc = 25	2.5	W

(•)Pulse width limited by safe operating area


Description

This Power MOSFET STS10PF30L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance.

Parameters:

Technical/Catalog Information	STS10PF30L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	14 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	2300pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	39nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS10PF30L STS10PF30L 497 4120 1 ND 49741201ND 497-4120-1