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This device utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.
STS17NH3LL Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate- source voltage
± 16
V
ID (1)
Drain current (continuous) at TC = 25
17
A
ID
Drain current (continuous) at TC = 100
10.6
A
IDM(2)
Drain current (pulsed)
68
A
Ptot(1)
Drain current (pulsed)
2.7
W
Tstg
Storage temperature
-55 to 150
Tj
Operating junction temperature
1.This value is rated according to Rthj-pcb 2.Pulse width limited by safe operating area
Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)