MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:00+
STS2308, STS25NH3LL, STS2DNE60 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: SOP8
D/C: 00+
Description: MOSFET N-CH 30V 25A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS25NH3LL
File Size: 297309 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS2DNE60
File Size: 72578 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS25NH3LL |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 25A |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 12.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 4450pF @ 25V |
| Power - Max | 3.2W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 40nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS25NH3LL STS25NH3LL 497 2474 6 ND 49724746ND 497-2474-6 |
The STS25NH3LL utilizes the latest advanced design rules of ST's propetary STripFET™ technology. This novel 0.6m process coupled to unique metalization techniques re alizes the most advanced low voltage MOSFET in SO-8 ever produced. It is therefore suit able for the most demanding DC-DC converter applications where high efficiency is to be achived at high output current.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 18 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
25 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
18 |
A |
|
IDM(`) |
Drain Current (pulsed) |
100 |
A |
|
EAS (1) |
Single Pulse Avalanche Energy |
200 |
mJ |
|
PTOT |
Total Dissipation at Tc = 25 |
3.2 |
W |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
2 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
1.3 |
A |
|
IDM(`) |
Drain Current (pulsed) |
8 |
A |
|
PTOT |
Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation |
2.0 1.6 |
W |
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