STS3401, STS3C2F100, STS3C3F30L Selling Leads, Datasheet
MFG:SAMHOP Package Cooled:SOT-23 D/C:07+
STS3401, STS3C2F100, STS3C3F30L Datasheet download
Part Number: STS3401
MFG: SAMHOP
Package Cooled: SOT-23
D/C: 07+
STS3401, STS3C2F100, STS3C3F30L
- Table of contents:
Info of STS3401
Info of STS3C2F100
Info of STS3C3F30L
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About STS3401
PDF/DataSheet Download
Datasheet: STS3401
File Size: 696659 KB
Manufacturer:
Download : Click here to Download
About STS3C2F100
PDF/DataSheet Download
Datasheet: STS3C2F100
File Size: 371676 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About STS3C3F30L
PDF/DataSheet Download
Datasheet: STS3C3F30L
File Size: 423028 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
STS3401 Maximum Ratings
| P arameter | S ymbol | Limit | Unit |
| Drain-S ource Voltage | VDS | - 30 | V |
| Gate-S ource Voltage | VGS | ±20 | V |
| Drain Current-Continuous @ TJ=125 C -Pulsed | ID IDM |
- 3 - 10 |
A |
| Drain-S ource Diode Forward Current | IS | -1.25 | A |
| Maximum Power Dissipation | PD | 1.25 | W |
| Operating Junction and S torage Temperature R ange |
TJ , TSTG | -55 to 150 |
STS3401 Features
·S uper high dense cell design for low R DS (ON).
·R ugged and reliable.
·S OT-23 P ackage.
·R ugged and reliable.
·S OT-23 P ackage.
STS3C2F100 General Description
This MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STS3C2F100 Maximum Ratings
| Symbol |
Parameter |
N-CHANNEL |
P-CHANNEL |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V | |
|
VDGR |
Drain- gate Voltage (RGS = 20 kΏ) |
100 |
V | |
|
VGS |
Gate-Source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
3.0 |
1.5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
1.9 |
1.0 |
A |
|
IDM(•) |
Drain Current (pulsed) |
12 |
6 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
2 |
W | |
|
Tstg |
Storage Temperature |
-65 to 150 |
||
|
Tj |
Max. Operating Junction Temperature |
150 |
||
STS3C2F100 Typical Application
DC MOTOR DRIVES
AUDIO AMPLIFIER
AUDIO AMPLIFIER
STS3C2F100 Connection Diagram
STS3C3F30L General Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STS3C3F30L Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
N-CHANNEL |
P-CHANNEL | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kΏ) |
30 |
30 |
V |
|
VGS |
Gate-Source Voltage |
±16 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
3.5 |
2.7 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
2.2 |
1.7 |
A |
|
IDM(1) |
Drain Current (pulsed) |
14 |
11 |
A |
|
PTOT |
Total Dissipation at TC = 25°C Single Operation Total Dissipation at TC = 25°C Dual Operation |
1.6 2 |
W | |
|
Tstg |
Storage Temperature |
-65 to 150 |
||
|
Tj |
Max. Operating Junction Temperature |
150 |
||
STS3C3F30L Typical Application
·DC/DC CONVERTERS
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN CELLULAR PHONES
·BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN CELLULAR PHONES
STS3C3F30L Connection Diagram
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