MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:00+
STS3DNE60L, STS3DNF30L, STS3DPF20V Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SO-8
D/C: 00+
Description: MOSFET N-CH 60V 3A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS3DNE60L
File Size: 73104 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS3DNF30L
File Size: 72495 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS3DPF20V
File Size: 265292 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS3DNE60L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 3A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 815pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 13.5nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS3DNE60L STS3DNE60L |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
60 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
60 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
3 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
1.9 |
A |
|
IDM(`) |
Drain Current (pulsed) |
12 |
A |
|
PTOT |
Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation |
2.0 1.6 |
W |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
3.5 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
2.2 |
A |
|
IDM(`) |
Drain Current (pulsed) |
14 |
A |
|
PTOT |
Total Dissipation at TC = 25°C
Dual OperationTotal Dissipation at TC = 25°C Single Operation |
2 1.6 |
W |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 12 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
3 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
1.9 |
A |
|
IDM(`) |
Drain Current (pulsed) |
12 |
A |
|
PTOT |
Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation |
1.6 2 |
W |
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