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STS3DPF30L, STS3DPF45, STS3DPF60L

Table of contents:
Info of STS3DPF30L
Info of STS3DPF45
Info of STS3DPF60L

STS3DPF30L, STS3DPF45, STS3DPF60L Selling Leads, Datasheet

MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:01+

STS3DPF30L, STS3DPF45, STS3DPF60L Datasheet download

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Part Number: STS3DPF60L

Category: Discrete Semiconductor Products

MFG: STMicroelectronics (VA)

Package Cooled: SO-8

D/C: 01+

Description: MOSFET 2P-CH 60V 3A 8-SOIC

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STS3DPF30L General Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS3DPF30L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current (continuous) at T_c = 25 Single Operation	3	A
I_D	Drain Current (continuous) at T_c= 100 Single Operation	1.9	A
I_DM(`)	Drain Current (pulsed)	12	A
P_TOT	Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation	2.0 1.6	W W

(`) Pulse width limited by safe operating area.

STS3DPF30L Typical Application

·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGMENT IN CELLULAR PHONES
·DC-DC CONVERTER

STS3DPF30L Connection Diagram

STS3DPF60L Parameters

Technical/Catalog Information	STS3DPF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	120 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	630pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	15.7nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS3DPF60L STS3DPF60L 497 4123 1 ND 49741231ND 497-4123-1

STS3DPF60L General Description

This MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS3DPF60L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	60	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	60	V
V_GS	Gate-Source Voltage	± 16	V
I_D	Drain Current (continuous) at T_c = 25	3	A
I_D	Drain Current (continuous) at T_c= 100	1.9	A
IDM(`)	Drain Current (pulsed)	12	A
P_TOT	Total Dissipation at T_c= 25	2	W
T_stg	Storage Temperature	-55 to 150
T_j	Max. Operating Junction Temperature	-55 to 150

(•)Pulse width limited by safe operating area .

STS3DPF60L Features

· TYPICAL RDS(on) = 0.10 Ω @ 10V
· STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLYY
· LOW THRESHOLD DRIVE

STS3DPF60L Typical Application

DC-DC CONVERTERS

STS3DPF60L Connection Diagram

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