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STS4DNF30L, STS4DNF60L, STS4DNFS30

Table of contents:
Info of STS4DNF30L
Info of STS4DNF60L
Info of STS4DNFS30

STS4DNF30L, STS4DNF60L, STS4DNFS30 Selling Leads, Datasheet

MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:08+

STS4DNF30L, STS4DNF60L, STS4DNFS30 Datasheet download

Five Points

Part Number: STS4DNF30L

Category: Discrete Semiconductor Products

MFG: STMicroelectronics (VA)

Package Cooled: SO-8

D/C: 08+

Description: MOSFET N-CH 30V 4.5A 8-SOIC

Price Break

1
10
100
250
500
1000

Unit Price

.95000
.73500
.63000
.58800
.52500
.42000

Extended Price

0.95
7.35
63.00
147.00
262.50
420.00

(All prices are in USD) Prices for reference only

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STS4DNF30L Parameters

Technical/Catalog Information	STS4DNF30L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	9nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DNF30L STS4DNF30L 497 5251 6 ND 49752516ND 497-5251-6

STS4DNF30L General Description

This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS4DNF30L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 16	V
I_D	Drain Current (continuous) at T_c = 25	4	A
I_D	Drain Current (continuous) at T_c= 100	2.5	A
I_DM(`)	Drain Current (pulsed)	16	A
P_TOT	Total Dissipation at T_c= 25	2	W

(•)Pulse width limited by safe operating area

STS4DNF30L Typical Application

BATTERY MANAGMENT IN NOMADIC EQUIPMENT
POWER MANAGMENT IN CELLULAR PHONES
DC MOTOR DRIVE

STS4DNF30L Connection Diagram

STS4DNF60L Parameters

Technical/Catalog Information	STS4DNF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	55 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	1030pF @ 25V
Power - Max	2W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DNF60L STS4DNF60L 497 3226 6 ND 49732266ND 497-3226-6

STS4DNF60L General Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS4DNF60L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	60	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	60	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current (continuous) at T_c = 25 Single Operation	4	A
I_D	Drain Current (continuous) at T_c= 100 Single Operation	2.5	A
I_DM(`)	Drain Current (pulsed)	16	A
P_TOT	Total Dissipation at TC = 25°C Dual OperationTotal Dissipation at TC = 25°C Single Operation	2 1.6	W W

(`) Pulse width limited by safe operating area.

STS4DNF60L Typical Application

·DC MOTOR DRIVE
·DC-DC CONVERTERS
·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs

STS4DNF60L Connection Diagram

STS4DNFS30 Parameters

Technical/Catalog Information	STS4DNFS30
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	55 mOhm @ 2A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	4.7nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS4DNFS30 STS4DNFS30 497 6187 1 ND 49761871ND 497-6187-1

STS4DNFS30 General Description

This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing a large variety of DC-DC converters for printers, portable equipment.

STS4DNFS30 Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source voltage (V_GS= 0)	30	V
V_GS	Gate- source voltage	± 20	V
I_D	Drain current (continuous) at T_C = 25°C	4.5	A
I_D	Drain current (continuous) at T_C = 100°C	3.2	A
I_DM⁽¹⁾	Drain current (pulsed)	13	A
P_TOT	Total dissipation at T_C= 25°C	2	W

1. Pulse width limited by safe operating area

STS4DNFS30 Typical Application

·Switching application

STS4DNFS30 Connection Diagram

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