MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:00+
STS4DNFS30L, STS4DPF20L, STS4DPF2LS Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: SOP-8
D/C: 00+
Description: MOSFET P-CH DUAL 20V 4A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS4DNFS30L
File Size: 250872 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STS4DPF20L
File Size: 255030 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS4DNFS30L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 9nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Diode (Isolated) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS4DNFS30L STS4DNFS30L 497 3227 2 ND 49732272ND 497-3227-2 |
This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
8 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
32 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
2.5 |
W |
|
Symbol |
Parameter |
Value |
Unit | |
|
VRRM |
Repetitive Peak Reverse Voltage |
30 |
V | |
|
IF(RMS) |
RMS Forward Current |
20 |
A | |
|
IF(AV) |
Average Forward Current |
TL=125 =0.5 |
3 |
A |
|
IFSM |
Surge Non Repetit ive Forward Current |
tp= 10 ms Sinusoidal |
75 |
A |
|
IRRM |
Repetitive Peak Reverse Current |
tp = 2 µs F=1 kHz |
1 |
A |
|
IRSM |
Non Repetitive Peak Reverse Current |
tp=100 µs |
1 |
A |
|
dv/dt |
Critical Rate Of Rise Of Reverse Voltage |
10000 |
V/µs |
| Technical/Catalog Information | STS4DPF20L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| Power - Max | 2W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 16nC @ 5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS4DPF20L STS4DPF20L 497 8042 6 ND 49780426ND 497-8042-6 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 16 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
2.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation |
1.6 2 |
W |
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