MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+
STS4DPF30L, STS4DPFS20L, STS4DPFS2LS Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOP8
D/C: 08+
Description: MOSFET 2P-CH 30V 4A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS4DPF30L
File Size: 111552 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS4DPFS20L
File Size: 266207 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS4DPFS2LS
File Size: 271318 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS4DPF30L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 16nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS4DPF30L STS4DPF30L 497 3228 2 ND 49732282ND 497-3228-2 |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 16 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 Single Operation |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 Single Operation |
2.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at TC = 25°CDual Operation Total Dissipation at TC = 25°CSingle Operation |
2.0 1.6 |
W |
This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
±16 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.4 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2 |
W |
This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.4 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2 |
W |
|
EAS (1) |
Single Pulse Avalanche Energy |
20 |
mJ |
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