MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP-8 D/C:08+
STS4DPFS30L, STS4NF100, STS4PF20V Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SOP-8
D/C: 08+
Description: MOSFET N-CH 100V 4A 8-SOIC
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: STS4DPFS30L
File Size: 270472 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS4NF100
File Size: 281155 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS4PF20V
File Size: 274059 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS4DPFS30L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 16nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Diode (Isolated) |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STS4DPFS30L STS4DPFS30L 497 4397 1 ND 49743971ND 497-4397-1 |
This product associates the latest low voltage STripFET™ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.4 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
1.6 |
W |
| Technical/Catalog Information | STS4NF100 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2A, 10V |
| Input Capacitance (Ciss) @ Vds | 870pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 41nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS4NF100 STS4NF100 497 8043 1 ND 49780431ND 497-8043-1 |
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
100 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
100 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
2.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 12 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
2.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
16 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
Price: 5-6.5 USD
DL-7140-211M laser tube
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
