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This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STS5NF60L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain- gate Voltage (RGS = 20 k)
60
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25
5
A
ID
Drain Current (continuous) at Tc = 100
3
A
IDM(`)
Drain Current (pulsed)
20
A
PTOT
Total Dissipation at Tc = 25
2.5
W
(`) Pulse width limited by safe operating area
STS5NF60L Typical Application
·DC MOTOR DRIVE ·DC-DC CONVERTERS ·BATTERY MANAGMENT IN NOMADIC EQUIPMENT ·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely extremely low on-resistance when driven at 2.5V.
STS5PF20V Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
20
V
VDGR
Drain-gate Voltage (RGS = 20 k)
20
V
VGS
Gate- source Voltage
± 8
V
ID
Drain Current (continuous) at TC = 25°C
5
A
ID
Drain Current (continuous) at TC = 100°C
3.1
A
IDM (`)
Drain Current (pulsed)
20
A
PTOT
Total Dissipation at TC = 25°C
2.5
W
(`) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
STS5PF20V Features
` TYPICAL RDS(on) = 0.065 (@4.5V) ` TYPICAL RDS(on) = 0.085 (@2.5V) ` ULTRA LOW THRESHOLD GATE DRIVE (2.5V) ` STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
STS5PF20V Typical Application
· POWER MANAGEMENT IN CELLULAR PHONES · DC-DC CONVERTERS · BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
This Power MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.
STS5PF30L Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 20
V
ID
Drain Current (continuous) at Tc = 25 Single Operation Drain Current (continuous) at Tc = 100 Single Operation
5 3
A A
IDM(`)
Drain Current (pulsed)
20
A
PTOT
Total Dissipation at Tc = 25
2.5
W
(*)Value limited by wires bonding (l) Pulse width limited by safe operating area
STS5PF30L Typical Application
BATTERY MANAGMENT IN NOMADIC EQUIPMENT POWER MANAGMENT IN CELLULAR PHONES
