MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SO-8 D/C:08+
STS6DNF3LL, STS6NF20V, STS6PF30L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: SO-8
D/C: 08+
Description: MOSFET P-CH 30V 6A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS6NF20V
File Size: 262430 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS6PF30L
File Size: 302732 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS6NF20V |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 3A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 460pF @ 15V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 11.5nC @ 4.5V |
| Package / Case | 8-SOIC |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS6NF20V STS6NF20V |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
20 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
20 |
V |
|
VGS |
Gate-Source Voltage |
± 12 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
6 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
3.8 |
A |
|
IDM(`) |
Drain Current (pulsed) |
24 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
| Technical/Catalog Information | STS6PF30L |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 30 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 1670pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 28nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS6PF30L STS6PF30L |
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
12 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
7.5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
48 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
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