STS7C4F30L, STS7C4F30L(Z341), STS7DNF30L Selling Leads, Datasheet
MFG:ST Package Cooled:SOP8 D/C:08+
STS7C4F30L, STS7C4F30L(Z341), STS7DNF30L Datasheet download

Part Number: STS7C4F30L
MFG: ST
Package Cooled: SOP8
D/C: 08+
MFG:ST Package Cooled:SOP8 D/C:08+
STS7C4F30L, STS7C4F30L(Z341), STS7DNF30L Datasheet download

MFG: ST
Package Cooled: SOP8
D/C: 08+
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PDF/DataSheet Download
Datasheet: STS7C4F30L
File Size: 413471 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS7DNF30L
File Size: 47596 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit | |
|
N-CHANNEL |
P-CHANNEL | |||
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kΏ) |
30 |
30 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V | |
|
ID |
Drain Current (continuous) at Tc = 25 |
7 |
4 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
4.4 |
2.5 |
A |
|
IDM(1) |
Drain Current (pulsed) |
28 |
16 |
A |
|
PTOT |
Total Dissipation at TC = 25°C Single Operation Total Dissipation at TC = 25°C Dual Operation |
1.6 2 |
W W | |
|
Tstg |
Storage Temperature |
-65 to 150 |
||
|
Tj |
Max. Operating Junction Temperature |
150 |
||

This Power MOSFET is the second generation of STMicroelectronics unique " Single Feature SizeTM " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at TC = 25°C Single Operation Drain Current (continuous) at TC = 100°C Single Operation |
7 4 |
A |
|
IDM(`) |
Drain Current (pulsed) |
28 |
A |
|
PTOT |
Total Dissipation at Tc = 25 oC Dual Operation Total Dissipation at Tc = 25 oC Sinlge Operation |
2 1.6 |
W W |

