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STS7NF60L, STS7PF30L, STS8050

Table of contents:
Info of STS7NF60L
Info of STS7PF30L
Info of STS8050

STS7NF60L, STS7PF30L, STS8050 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+

STS7NF60L, STS7PF30L, STS8050 Datasheet download

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Part Number: STS7NF60L

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOP8

D/C: 08+

Description: MOSFET P-CH 30V 7A 8-SOIC

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STS7NF60L Parameters

Technical/Catalog Information	STS7NF60L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	19.5 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	1700pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	34nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS7NF60L STS7NF60L 497 4757 1 ND 49747571ND 497-4757-1

STS7NF60L General Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS7NF60L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	20	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	20	V
V_GS	Gate-Source Voltage	± 12	V
I_D	Drain Current (continuous) at T_c = 25	5	A
I_D	Drain Current (continuous) at T_c= 100	3	A
I_DM(`)	Drain Current (pulsed)	20	A
P_TOT	Total Dissipation at TC = 25°C	2.5	W

EAS⁽¹⁾

Single Pulse Avalanche Energy

350

(`) Pulse width limited by safe operating area. (1) Starting T_j= 25 oC, I_D = 7.5 A V_DD = 30 V

STS7NF60L Typical Application

·DC MOTOR DRIVE
·DC-DC CONVERTERS
·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs

STS7NF60L Connection Diagram

STS7PF30L Parameters

Technical/Catalog Information	STS7PF30L
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	7A
Rds On (Max) @ Id, Vgs	21 mOhm @ 3.5A, 10V
Input Capacitance (Ciss) @ Vds	2600pF @ 25V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	7nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS7PF30L STS7PF30L 497 3233 2 ND 49732332ND 497-3233-2

STS7PF30L General Description

This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS7PF30L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current (continuous) at T_c = 25	7	A
I_D	Drain Current (continuous) at T_c= 100	4.4	A
IDM(`)	Drain Current (pulsed)	28	A
P_TOT	Total Dissipation at T_c= 25	2.5	W

(•)Pulse width limited by safe operating area

STS7PF30L Typical Application

BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
POWER MANAGEMENT IN CELLULAR PHONES

STS7PF30L Connection Diagram

STS8050 General Description

Bipolar transistors, also called junction type transistors, are a kind of transistors. Unlike field-effect transistors (unipolar transistors), they are called bipolar because they have two kinds of carriers (hole, electron)

STS8050 Maximum Ratings

Characteristic	Symbol	Ratings	Unit
Collector-Base voltage	V_CBO	-40	V
Collector-Emitter voltage	V_CEO	-30	V
Emitter-Base voltage	V_EBO	-5	V
Collector current	I_C	-500	mA
Emitter current	I_E	500	mA
Collector dissipation	P_C	625	mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55~150

STS8050 Features

• Complementary pair with STS8550

STS8050 Connection Diagram

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