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STS8550C, STS8C5H30L, STS8DNF3LL

Table of contents:
Info of STS8550C
Info of STS8C5H30L
Info of STS8DNF3LL

STS8550C, STS8C5H30L, STS8DNF3LL Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:06+

STS8550C, STS8C5H30L, STS8DNF3LL Datasheet download

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Part Number: STS8C5H30L

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 06+

D/C:

Description: MOSFET 2N-CH 30V 8A 8-SOIC

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STS8C5H30L Parameters

Technical/Catalog Information	STS8C5H30L
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A, 4.2A
Rds On (Max) @ Id, Vgs	22 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	857pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS8C5H30L STS8C5H30L 497 4398 1 ND 49743981ND 497-4398-1

STS8C5H30L General Description

This MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS8C5H30L Maximum Ratings

Symbol	Parameter	Value		Unit
		N-CHANNEL	P-CHANNEL
V_DS	Drain-source Voltage (VGS = 0)	30		V
V_DGR	Drain-gate Voltage (RGS = 20 k)	30		V
V_GS	Gate- source Voltage	± 16	± 16	V
I_D	Drain Current (continuous) at TC = 25°C Single Operating	8	4.2	A
I_D	Drain Current (continuous) at TC = 100°C Single Operating	6.4	3.1	A
I_DM (`)	Drain Current (pulsed)	32	16.8	A
P_TOT	Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating	1.6 2		W W
T_j T_stg	Operating Junction Temperature Storage Temperature	150 -55 to 150		°C °C

(`) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed

STS8C5H30L Features

` TYPICAL RDS(on) (N-Channel) = 0.018
` TYPICAL RDS(on) (P-Channel) = 0.045
` CONDUCTION LOSSES REDUCED
` SWITCHING LOSSES REDUCED
` LOW THRESHOLD DRIVE
` STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

STS8C5H30L Typical Application

· DC/DC CONVERTERS
· BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
· POWER MANAGEMENT IN CELLULAR PHONES
· DC MOTOR DRIVE

STS8DNF3LL Parameters

Technical/Catalog Information	STS8DNF3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	20 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	800pF @ 25V
Power - Max	1.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS8DNF3LL STS8DNF3LL 497 2470 2 ND 49724702ND 497-2470-2

STS8DNF3LL General Description

This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

STS8DNF3LL Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 16	V
I_D	Drain Current (continuous) at T_C = 25°C Single Operation Drain Current (continuous) at T_C= 100°C Single Operation	8 5	A
I_DM(`)	Drain Current (pulsed)	36	A
P_TOT	Total Dissipation at T_C= 25°C Dual operating Total Dissipation at T_C = 25°C Single operating	2 1.6	W W

(•)Pulse width limited by safe operating area

STS8DNF3LL Typical Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS

STS8DNF3LL Connection Diagram

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