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STS8DNFS30L, STS8DNH3LL, STS8NF30L

Table of contents:
Info of STS8DNFS30L
Info of STS8DNH3LL
Info of STS8NF30L

STS8DNFS30L, STS8DNH3LL, STS8NF30L Selling Leads, Datasheet

MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+

STS8DNFS30L, STS8DNH3LL, STS8NF30L Datasheet download

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Part Number: STS8DNH3LL

Category: Discrete Semiconductor Products

MFG: STMicroelectronics (VA)

Package Cooled: SOP8

D/C: 08+

Description: MOSFET 2N-CH 30V 8A 8-SOIC

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STS8DNH3LL Parameters

Technical/Catalog Information	STS8DNH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	22 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	857pF @ 25V
Power - Max	2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS8DNH3LL STS8DNH3LL 497 4399 1 ND 49743991ND 497-4399-1

STS8DNH3LL General Description

This application specific MOSFET is the Third generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

STS8DNH3LL Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 16	V
I_D	Drain Current (continuous) at T_c = 25	8	A
I_D	Drain Current (continuous) at T_c= 100	5	A
I_DM(`)	Drain Current (pulsed)	32	A
P_TOT	Total Dissipation at T_c= 25	2	W

(•)Pulse width limited by safe operating area

STS8DNH3LL Typical Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS

STS8DNH3LL Connection Diagram

STS8NF30L General Description

This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transisto shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STS8NF30L Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current (continuous) at T_c = 25 Single Operation	8	A
I_D	Drain Current (continuous) at T_c= 100 Single Operation	5	A
I_DM(`)	Drain Current (pulsed)	32	A
P_TOT	Total Dissipation at TC = 25°C	2.5	W

(`) Pulse width limited by safe operating area.

STS8NF30L Typical Application

·DC MOTOR DRIVE
·DC-DC CONVERTERS
·BATTERY MANAGMENT IN NOMADIC EQUIPMENT
·POWER MANAGEMENT IN PORTABLE/DESKTOP PCs

STS8NF30L Connection Diagram

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