MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:03+
STS8NFS30L, STS9313A, STS9NF30L Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: SOP8
D/C: 03+
Description: MOSFET N-CH 30V 9A 8-SOIC
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Datasheet: STS8NFS30L
File Size: 86833 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STS9NF30L
File Size: 46084 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
This product associates the latest low voltage StripFET] in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DCDC converters for printers, portable equipment, and cellular phones.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
8 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
5 |
A |
|
IDM(`) |
Drain Current (pulsed) |
32 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
2.5 |
W |
|
Symbol |
Parameter |
Value |
Unit | |
|
VRRM |
Repetitive Peak Reverse Voltage |
30 |
V | |
|
IF(RMS) |
RMS Forward Current |
20 |
A | |
|
IF(AV) |
Average Forward Current |
TL=125 =0.5 |
3 |
A |
|
IFSM |
Surge Non Repetit ive Forward Current |
tp= 10 ms Sinusoidal |
75 |
A |
|
IRSM |
Non Repetitive Peak Reverse Current |
tp=100 µs |
1 |
A |
|
dv/dt |
Critical Rate Of Rise Of Reverse Voltage |
10000 |
V/µs |
| Technical/Catalog Information | STS9NF30L |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 4.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 730pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 12.5nC @ 4.5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS9NF30L STS9NF30L 497 3234 1 ND 49732341ND 497-3234-1 |
This application specific Power Mosfet is the third generation of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conductionand switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.
|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
30 |
V |
|
VGS |
Gate-Source Voltage |
± 20 |
V |
|
ID |
Drain Current (continuous) at Tc = 25 |
9 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
5.6 |
A |
|
IDM(`) |
Drain Current (pulsed) |
36 |
A |
|
PTOT |
Total Dissipation at Tc = 25 |
2.5 |
W |
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