MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:BGA D/C:07+
STS962L, STS9D8NH3LL, STS-A5 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: BGA
D/C: 07+
Description: MOSFET DUAL N-CHAN 30V 9A 8-SOIC
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PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS9D8NH3LL
File Size: 433722 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STS9D8NH3LL |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 9A |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 857pF @ 25V |
| Power - Max | 2W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 10nC @ 5V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STS9D8NH3LL STS9D8NH3LL 497 6030 2 ND 49760302ND 497-6030-2 |
This device uses the latest advanced design rules of ST's STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power MOSFET has been designed to replace two SO-8 packages in DC-DC converters.
| Symbol | Parameter | Type | Value | Unit |
| VDS | Drain-source voltage (vGS = 0) | Q1 Q2 |
30 30 |
V V |
| VGS | Gate- source voltage | Q1 Q2 |
±16 ±16 |
V V |
| ID | Drain current (continuous) at TC = 25°C | Q1 Q2 |
8 9 |
A A |
| ID | Drain current (continuous) at TC = 100°C |
Q1 Q2 |
5 6.3 |
A A |
| IDM(1) | Drain current (pulsed) | Q1 Q2 |
32 36 |
A A |
| PTOT | Total dissipation at TC = 25°C | Q1 Q2 |
2 2 |
W W |
| EAS(2) | Single pulse avalanche energy | 150 | mJ |
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