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STS9NF3LL, STS9NH3LL, STSA851

Table of contents:
Info of STS9NF3LL
Info of STS9NH3LL
Info of STSA851

STS9NF3LL, STS9NH3LL, STSA851 Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+

STS9NF3LL, STS9NH3LL, STSA851 Datasheet download

Five Points

Part Number: STS9NF3LL

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: SOP8

D/C: 08+

Description: TRANSISTOR NPN 150V 5A TO-92

Price Break

1
10
100
250
500
1000

Unit Price

1.60000
1.36000
1.16000
1.04000
.96000
.76000

Extended Price

1.60
13.60
116.00
260.00
480.00
760.00

(All prices are in USD) Prices for reference only

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STS9NF3LL Parameters

Technical/Catalog Information	STS9NF3LL
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	19 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	800pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS9NF3LL STS9NF3LL 497 8196 1 ND 49781961ND 497-8196-1

STS9NF3LL General Description

This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

STS9NF3LL Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source Voltage (V_GS= 0)	30	V
V_DGR	Drain- gate Voltage (R_GS = 20 k)	30	V
V_GS	Gate-Source Voltage	± 20	V
I_D	Drain Current (continuous) at T_c = 25	12	A
I_D	Drain Current (continuous) at T_c= 100	7.5	A
I_DM(`)	Drain Current (pulsed)	48	A
P_TOT	Total Dissipation at T_c= 25	2.5	W

(•)Pulse width limited by safe operating area

STS9NF3LL Typical Application

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCS

STS9NF3LL Connection Diagram

STS9NH3LL Parameters

Technical/Catalog Information	STS9NH3LL
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	9A
Rds On (Max) @ Id, Vgs	22 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds	857pF @ 25V
Power - Max	2.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STS9NH3LL STS9NH3LL 497 6189 1 ND 49761891ND 497-6189-1

STS9NH3LL General Description

This application specific Power MOSFET is the third generation of STMicroelectronics unique "single feature size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

STS9NH3LL Maximum Ratings

Symbol	Parameter	Value	Unit
V_DS	Drain-source voltage (V_GS = 0)	30	V
V_GS	Gate-source voltage	±16	V
I_D	Drain current (continuous) at T_C = 25°C	9	A
I_D	Drain current (continuous) at T_C=25°C	6	A
I_DM⁽¹⁾	Drain current (pulsed)	36	A
P_TOT	Total dissipation at T_C = 25°C	2.5	W
T_JT_stg	Operating junction temperature Storage temperature	-55 to 150

1. Pulse width limited by safe operating area

STS9NH3LL Features

Optimal RDS(on) x Qg trade-off @ 4.5V
Conduction losses reduced
Switching losses reduced

STS9NH3LL Typical Application

Switching application

STS9NH3LL Connection Diagram

STSA851 Parameters

Technical/Catalog Information	STSA851
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	5A
Power - Max	1.1W
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 2A, 1V
Vce Saturation (Max) @ Ib, Ic	120mV @ 50mA, 1A
Frequency - Transition	130MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3 (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STSA851 STSA851 497 3235 ND 4973235ND 497-3235

STSA851 General Description

The device is manufactured in NPN Planar Technology by using a "Base Island" layout.

The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

STSA851 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-Base Voltage (I_E = 0)	150	V
V_CEO	Collector-Emitter Voltage (I_B = 0)	60	V
V_EBO	Emitter-Base Voltage (I_C = 0)	7	V
I_C	Collector Current	5	A
I_CM	Collector Peak Current(t_p < 5 ms)	15	A
I_B	Base Current	1	A
I_BM	Base Peak Current	-0.5	A
P_TOT	Total Dissipation at T_amb= 25	1.1	W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

STSA851 Typical Application

·EMERGENCY LIGHTING
·VOLTAGE REGULATORS
·RELAY DRIVERS
·HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS

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