Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This device utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.
STSJ60NH3LL Maximum Ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VGS
Gate- source voltage
± 16
V
ID(1)
Drain current (continuous) at TC = 25
60
A
ID
Drain current (continuous) at TC = 100
37.5
A
ID(2)
Drain current (continuous) at TC = 25
15
A
ID
Drain current (continuous) at TC = 100
9.4
A
IDM(3)
Drain current (pulsed)
60
A
Ptot(1)
Total dissipation at TC = 25
50
W
Ptot(2)
Total dissipation at TC = 25
3
W
Tstg
Storage temperature
-55 to 150
Tj
Operating junction temperature
1. This value is rated according to Rthj-c 2. This value is rated according to Rthj-pcb 3. Pulse width limited by safe operating area