MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:TO247 D/C:00(hot sell))
STY34NB50, STY34NB50F, STY60NA20 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: TO247
D/C: 00(hot sell))
Description: MOSFET N-CH 500V 34A MAX247
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PDF/DataSheet Download
Datasheet: STY34NB50
File Size: 95429 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STY34NB50F
File Size: 90096 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STY60NA20
File Size: 36323 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STY34NB50 |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 34A |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 17A, 10V |
| Input Capacitance (Ciss) @ Vds | 9100pF @ 25V |
| Power - Max | 450W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 223nC @ 10V |
| Package / Case | MAX247? |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | STY34NB50 STY34NB50 497 2680 5 ND 49726805ND 497-2680-5 |
Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
500 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
34 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
21.4 | A |
| IDM(.) |
Drain Current (pulsed) |
136 | A |
| PTOT |
Total Dissipation at Tc = 25 |
450 | W |
|
Derating Factor |
3.61 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
500 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
500 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
34 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
21.4 | A |
| IDM(•) |
Drain Current (pulsed) |
136 | A |
| PTOT |
Total Dissipation at Tc = 25 |
450 | W |
|
Derating Factor |
3.61 | W/ | |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
The Max247TM package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
| Symbol | Parameter | Value | Unit |
| VDS |
Drain-source Voltage (VGS = 0) |
200 | V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
200 | V |
| VGS |
Gate-source Voltage |
±30 | V |
| ID |
Drain Current (continuous) at Tc = 25 |
60 | A |
| ID |
Drain Current (continuous) at Tc = 100 |
40 | A |
| IDM(•) |
Drain Current (pulsed) |
240 | A |
| PTOT |
Total Dissipation at Tc = 25 |
300 | W |
|
Derating Factor |
2.4 | W/ | |
| Tstg |
Storage Temperature |
-65 to 150 | |
| Tj |
Max. Operating Junction Temperature |
150 |
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