STY100NS20FD

MOSFET N-Ch 200 Volt 100 A

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SeekIC No. : 00161796 Detail

STY100NS20FD: MOSFET N-Ch 200 Volt 100 A

floor Price/Ceiling Price

Part Number:
STY100NS20FD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : Max247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 100 A
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.024 Ohms
Package / Case : Max247


Application

·HIGH CURRENT, HIGH SPEED SWITCHING
·SWITCH MODE POWER SUPPLY (SMPS)
·DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

200 V
VDGR

Drain- gate Voltage (RGS = 20 k)

200 V
VGS

Gate-source Voltage

±20 V
ID

Drain Current (continuous) at Tc = 25

100 A
ID

Drain Current (continuous) at Tc = 100

63 A
IDM(`)

Drain Current (pulsed)

400 A
PTOT

Total Dissipation at Tc = 25

450 W

Derating Factor

3.6 W/

dv/dt(1)

Peak Diode Recovery voltage slope

25

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(`)Pulse width limited by safe operating area       (1)ISD 100A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.


Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics STY100NS20FD has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




Parameters:

Technical/Catalog InformationSTY100NS20FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs24 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 7900pF @ 25V
Power - Max450W
PackagingTube
Gate Charge (Qg) @ Vgs360nC @ 10V
Package / CaseMAX247?
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STY100NS20FD
STY100NS20FD
497 5321 5 ND
49753215ND
497-5321-5



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