SUD50N02-06P, SUD50N02-09P, SUD50N02-09P-E3 Selling Leads, Datasheet
MFG:VISHAY Package Cooled:. D/C:06+
SUD50N02-06P, SUD50N02-09P, SUD50N02-09P-E3 Datasheet download
Part Number: SUD50N02-06P
MFG: VISHAY
Package Cooled: .
D/C: 06+
SUD50N02-06P, SUD50N02-09P, SUD50N02-09P-E3
- Table of contents:
Info of SUD50N02-06P
Info of SUD50N02-09P
Info of SUD50N02-09P-E3
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About SUD50N02-06P
PDF/DataSheet Download
Datasheet: SUD50N02-06P
File Size: 183262 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About SUD50N02-09P
PDF/DataSheet Download
Datasheet: SUD50N02-09P
File Size: 54018 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About SUD50N02-09P-E3
PDF/DataSheet Download
Datasheet: SUD50N02-09P-E3
File Size: 54018 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
SUD50N02-06P General Description
N-Channel 20-V (D-S) 175C MOSFET
SUD50N02-06P Maximum Ratings
| SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) | |||||
| Parameter | Symbol | Test Conditions | Simulated Data |
Measured Data |
Unit |
| Static | |||||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 1.4 | V | |
| On-State Drain Currentb | ID(on) | VDS =5 V, VGS = 10 V | 964 | A | |
| Drain-Source On-State Resistanceb | rDS(on) | VGS = 10V, ID = 20A | 0.0041 | 0.0046 | |
| VGS = 10 V, ID = 20A, TJ = 125°C | 0.0057 | ||||
| VGS = 4.5 V, ID = 20 A | 0.0065 | 0.0073 | |||
| Forward Voltageb | VSD | IS= 50A, VGS = 0 V | 0.91 | 1.2 | V |
| Dynamica | |||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2418 | 2550 | pF |
| Output Capacitance | Coss | 816 | 900 | ||
| Reverse Transfer Capacitance | Crss | 348 | 415 | ||
| Total Gate Chargec | Qg | VDS = 10 V, VGS = 4.5 V, ID =50A | 20 | 19 | nC |
| Gate-Source Chargec | Qgs | 7.5 | 7.5 | ||
| Gate-Drain Chargec | Qgd | 6 | 6 | ||
| Turn-On Delay Timec | td(on) | VDD = 10V, RL = 0.20 ID50A, VGEN = 10 V, RG = 2.5 |
11 | 11 | ns |
| Rise Timec | tr | 10 | 10 | ||
| Turn-Off Delay Timec | td(off) | 9 | 24 | ||
| Fall Timec | tf | 9 | 9 | ||
|
Source-Drain Reverse Recovery Time |
trr |
IF = 50 A, di/dt = 100 A/µs |
31 |
35 | |
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 µs, duty cycle 2%.
c. Independent of operating temperature.
SUD50N02-09P General Description
N-Channel 20-V (D-S) 175C MOSFET
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