SUD06N10-225L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 100 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6.5 A
Package / Case : TO-252-3
Resistance Drain-Source RDS (on) : 200 mOhms


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		VDS	100	V
Gate-Source Voltage		VGS	±20
Continuous Drain Current (TJ = 175)b	TC = 25	ID	6.5	A
	TC = 125		3.75
Pulsed Drain Current		IDM	8.0
Continuous Source Current (Diode Conduction)		IS	6.5
Avalanche Current		IAR	5.0
Repetitive Avalanche Energy (Duty Cycle 1%)	L = 0.1 mH	EAR	1.25	mJ
Maximum Power Dissipation	TC = 25	PD	20b	W
	TA = 25		1.5a
Operating Junction and Storage Temperature Range		TJ, Tstg	−55 to 175

Description

N-Channel 100-V (D-S) 175C MOSFET SUD06N10-225L