Features: TrenchFET® Power MOSFET175 Junction TemperatureLow Gate ThresholdApplicationPass Transistor for LDOsPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 175) TC = 25 ID -15 A...
SUD15P01-52: Features: TrenchFET® Power MOSFET175 Junction TemperatureLow Gate ThresholdApplicationPass Transistor for LDOsPinoutSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VD...
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| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | -8 | V | |
| Gate-Source Voltage | VGS | ±8 | ||
| Continuous Drain Current (TJ = 175) | TC = 25 | ID | -15 | A |
| TC = 125 | -8.7 | |||
| Pulsed Drain Current | IDM | -25 | ||
| Avalanche Current | IAR | -10 | ||
| Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 5 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 21.4 | W |
| TA = 25 | 1.5 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 175 | ||