MOSFET 60V 10A 37W
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 10 A | ||
| Resistance Drain-Source RDS (on) : | 170 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252-3 | Packaging : | Reel |
| ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED) | ||||
|
Parameter |
Symbol | Limit | Unit | |
| Gate-Source Voltage | VGS | ±20 | ||
| Continuous Drain Current (TJ = 150) |
TC = 25 | ID | -10 | A |
| TC = 100 | -7 | |||
| Pulsed Drain Current | IDM | -20 | ||
| Continuous Source Current (Diode Conduction) |
IS |
-10 | ||
| Avalanche Current | IAR | -10 | ||
| Repetitive Avalanche Energy (Duty Cycle 1%) | L = 0.1 mH | EAR | 5 | mJ |
| Maximum Power Dissipation | TC = 25 | PD | 37 | W |
| TA = 25 | 2a | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to 175 | ||