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SUP60N06-12P, SUP60N06-14, SUP60N10

Table of contents:
Info of SUP60N06-12P
Info of SUP60N06-14
Info of SUP60N10

SUP60N06-12P, SUP60N06-14, SUP60N10 Selling Leads, Datasheet

MFG:Vishay Package Cooled:TO-220 D/C:2010+

SUP60N06-12P, SUP60N06-14, SUP60N10 Picture

SUP60N06-12P, SUP60N06-14, SUP60N10 Datasheet download

Five Points

Part Number: SUP60N06-12P

MFG: Vishay

Package Cooled: TO-220

D/C: 2010+

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SUP60N06-12P General Description

N-Channel 60-V (D-S) MOSFET

SUP60N06-14 General Description

The SUP60N06-14 is a kind of N-channel enhancement-mode transistor.

The following is about the absolute maximum ratings (TC=25 unless otherwise noted): (1)gate-source voltage, VGS: ±20 V; (2)continuous drain current (TJ=175), ID: 60 A when TC=12 and 42 A when TC=100; (3)pulsed drain current, IDM: 240 A; (4)avalanche current, IAR: 60 A; (5)repetitive avalance energy (L=0.1 mH), EAR: 180 mJ; (6)power dissipation, PD: 100 W when TC=25 and 2.7 W when TA=25; (7)operating junction and storage temperature range, TJ, Tstg: -55 to 175. Then is about the thermal resistance ratings: (1)junction-to-ambient, RthJA: 40/W when PCB mount and 80/W when free air; (2)junction-to-case, RthJC: 1.5/W.

The last one is about the specifications (TJ=25 unless otherwise noted): (1); (2)drain-source breakdown voltage, V(BR)DSS: 60 V min at VGS=0 V, ID=250A; (3)gate threshold voltage, VGD(th): 2.0 V min, 3.0 V typ and 4.0 V max at VDS=VGS, IDS=1 mA; (4)gate-body leakage, IGSS: ±100 nA max at VDS=0 V, VGS=±20 V; (5)on-state drain current, ID(on): 60 A min at VDS=5 V, VGS=10 V.

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