SUP28N15-52, US $ 2.18-3.83 , Vishay/Siliconix, SUP28N15-52 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158613 Detail

SUP28N15-52: MOSFET 150V 28A 120W

SUP28N15-52 Data Sheet

US $ 2.18~3.83 / Piece | Get Latest Price

Part Number:: SUP28N15-52
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

Price Break

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0~134
134~250
250~500
500~1000

Unit Price
$3.83
$3.62
$3.27
$2.18

Processing time
15 Days
15 Days
15 Days
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Upload time: 2025/12/27

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	150 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	28 A
Resistance Drain-Source RDS (on) :	52 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220AB-3	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 28 A
Package / Case : TO-220AB-3
Resistance Drain-Source RDS (on) : 52 mOhms

Features:

TrenchFET^® Power MOSFETS
175^oC Junction Temperature
PWM Optimized

Application

Primary Side Switch

Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter		Symbol	Limit	Unit
Drain-Source Voltage		V_DS	150	V
Gate-Source Voltage		V_GS	±20	V
Continuous Drain Currentd (T_J = 175)	T_C = 25	I_D	28	A
Continuous Drain Currentd (T_J = 175)	T_C= 125	I_D	16
Continuous Source Current (Diode Conduction)		I_S	28
Pulsed Drain Current		I_DM	50
Avalanche Current		I_AS	25
Repetitive Avalanche Energy^{_{(Duty Cycle 1%)}}	L = 0.1 mH	E_AS	31	mJ
Power Dissipation	T_C = 25	P_D	120^c	W
Power Dissipation	T_A = 25^b	P_D	3.75	W
Operating Junction and Storage Temperature Range		T_^J, T_^stg	-55 to 175

Description

N-Channel 150-V (D-S) 175C MOSFET SUP28N15-52

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SUP28N15-52

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