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SUP28N15-52

MOSFET 150V 28A 120W

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SeekIC No. : 00158613 Detail

SUP28N15-52: MOSFET 150V 28A 120W

SUP28N15-52 Data Sheet

floor Price/Ceiling Price

US $ 2.18~3.83 / Piece | Get Latest Price
Part Number:
SUP28N15-52
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~134
  • 134~250
  • 250~500
  • 500~1000
  • Unit Price
  • $3.83
  • $3.62
  • $3.27
  • $2.18
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 52 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 28 A
Package / Case : TO-220AB-3
Resistance Drain-Source RDS (on) : 52 mOhms


Features:

TrenchFET® Power MOSFETS
175oC Junction Temperature
PWM Optimized




Application

Primary Side Switch




Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20
Continuous Drain Currentd
(TJ = 175)		 TC = 25 ID 28 A
TC = 125 16
Continuous Source Current (Diode Conduction)

IS

28

Pulsed Drain Current IDM 50
Avalanche Current IAS 25
Repetitive Avalanche Energy(Duty Cycle 1%) L = 0.1 mH EAS 31 mJ
Power Dissipation TC = 25 PD 120c W
TA = 25b 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175





Description

N-Channel 150-V (D-S) 175C MOSFET SUP28N15-52




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