MFG:Microchip Technology Category:Integrated Circuits (ICs) Package Cooled:CDIP-8 D/C:08.09+
TC4404MJA, TC4405, TC4405AJ-6 Datasheet download
Category: Integrated Circuits (ICs)
MFG: Microchip Technology
Package Cooled: CDIP-8
D/C: 08.09+
Description: IC MOSFET DVR 1.5A DUAL OD 8CDIP
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PDF/DataSheet Download
Datasheet: TC4404MJA
File Size: 515152 KB
Manufacturer: MICROCHIP [Microchip Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC4405
File Size: 515152 KB
Manufacturer: MICROCHIP [Microchip Technology]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC4001
File Size: 197001 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | TC4404MJA |
| Vendor | Microchip Technology |
| Category | Integrated Circuits (ICs) |
| Configuration | Low-Side |
| Voltage - Supply | 4.5 V ~ 18 V |
| Current - Peak | 1.5A |
| Delay Time | 15ns |
| Package / Case | 8-CDIP (300 mil) |
| Packaging | Tube |
| Number of Outputs | 2 |
| Input Type | Inverting |
| Number of Configurations | 2 |
| Operating Temperature | -55°C ~ 125°C |
| High Side Voltage - Max (Bootstrap) | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TC4404MJA TC4404MJA |
The TC4404 and TC4405 are CMOS buffer-drivers constructed with complementary MOS outputs, where the drains of the totem-pole output have been left separated so that individual connections can be made to the pull-up and pull-down sections of the output. This allows the insertion of drain-current-limiting resistors in the pull-up and/or pulldown
sections, allowing the user to define the rates of rise and fall for a capacitive load; or a reduced output swing, if driving a resistive load, or to limit base current, when driving a bipolar transistor. Minimum rise and fall times, with no resistors, will be less than 30 nsec for a 1000-pF load. There is no upper limit.
For driving MOSFETs in motor-control applications, where slow-ON/fast-OFF operation is desired, these devices are superior to the previously-used technique of adding a diode-resistor combination between the driver output
and the MOSFET, because they allow accurate control of turn-ON, while maintaining fast turn-OFF and maximum noise immunity for an OFF device.
When used to drive bipolar transistors, these drivers maintain the high speeds common to other TelCom drivers. They allow insertion of a base current-limiting resistor, while providing a separate half-output for fast turn-OFF. By proper positioning of the resistor, either npn or pnp transistors can be driven.
For driving many loads in low-power regimes, these drivers, because they eliminate shoot-through currents in the output stage, require significantly less power at higher frequencies, and can be helpful in meeting low-power budgets.
Because neither drain in an output is dependent on the other, these devices can also be used as open-drain buffer/drivers where both drains are available in one device,
Supply Voltage ......................................................... +22V
Maximum Chip Temperature................................... +150
Storage Temperature Range .................. 65to +150
Lead Temperature (Soldering, 10 sec) ................... +300
Package Thermal Resistance
CerDIP RJ-A ................................................... 150/W
CerDIP RqJ-C ................................................... 55/W
PDIP RJ-A ...................................................... 125/W
PDIP RJ-C ........................................................ 45/W
SOIC RJ-A ..................................................... 155/W
SOIC RJ-C ....................................................... 45/W
Operating Temperature Range
C Version .................................................. 0 to +70
E Version ............................................ 40 to +85
M Version .......................................... 55 to +125
Package Power Dissipation (TA 70)
Plastic ................................................................730mW
CerDP ................................................................800mW
SOIC ..................................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability.
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