TC4007UBP

DescriptionThe TC4007UBP contains three elements of P-channel enhancement type MOS FET and three elements of N- channel enhancement type MOS FET. One pair of P- channel and N-channel functions as inverter and remaining two pairs provide the respective outputs of source and drain separately. Depend...

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SeekIC No. : 004513613 Detail

TC4007UBP: DescriptionThe TC4007UBP contains three elements of P-channel enhancement type MOS FET and three elements of N- channel enhancement type MOS FET. One pair of P- channel and N-channel functions as in...

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Part Number:
TC4007UBP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Description

The TC4007UBP contains three elements of P-channel enhancement type MOS FET and three elements of N- channel enhancement type MOS FET. One pair of P- channel and N-channel functions as inverter and remaining two pairs provide the respective outputs of source and drain separately. Depending on how connections are made, the versatile applications such as inverter, waveform shaping circuits, NAND(NOR) gatys, linear amplifiers, clocked gates, transmission gates and high fan-out buffers are easily obtainable.

The absolute maximum ratings of TC4007UBP are (1)DC supply voltage VDD: VSS-0.5~VSS+20V; (2)input voltage VIN: VSS-0.5~VDD+0.5V; (3)output voltage VOUT: VSS-0.5~VDD+0.5V; (4)DC input current IIN: ±10mA; (5)power dissipation PD: 300(DIP)/180(SOIC) mW; (6)operating temperature range Topr: -40~85°C; (7)storage temperature range Tstg: -65~150°C; (8)lead temp./time Tsol: 260°C·10sec.

The recommended operating conditions of TC4007UBP can be summarized as (1)DC supply voltage VDD: 3-18V; (2)input voltage VIN: 0 to VDD V. If you want to know more about this IC, please go to our website for more detail imformation.




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