TCE-RS1313, TCET1100, TCET1100G Selling Leads, Datasheet
MFG:MOT Package Cooled:MOT D/C:04+
TCE-RS1313, TCET1100, TCET1100G Datasheet download
Part Number: TCE-RS1313
MFG: MOT
Package Cooled: MOT
D/C: 04+
TCE-RS1313, TCET1100, TCET1100G
- Table of contents:
Info of TCE-RS1313
Info of TCET1100
Info of TCET1100G
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About TCED1100
PDF/DataSheet Download
Datasheet: TCED1100
File Size: 212951 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About TCET1100
PDF/DataSheet Download
Datasheet: TCET1100
File Size: 268935 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About TCET1100G
PDF/DataSheet Download
Datasheet: TCET1100G
File Size: 188011 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
TCET1100 General Description
The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead
plastic dual inline package.
The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.
TCET1100 Maximum Ratings
| Coupler | ||||
| Parameter | Test condition |
Symbol |
Value |
Unit |
| Isolation test voltage (RMS) | t = 1 min |
VISO |
5000 |
VRMS |
| Operating ambient temperature range |
Tamb |
- 40 to + 100 |
||
| Storage temperature range |
Tstg |
- 55 to + 125 |
||
| Soldering temperature | 2 mm from case, 10 s |
Tsld |
260 |
|
| Input | ||||
| Reverse voltage |
VR |
6 |
V | |
| Forward current |
IF |
60 |
mA | |
| Forward surge current | tp 10 s |
IFSM |
1.5 |
mA |
| Output | ||||
| Collector emitter voltage |
VCEO |
20 |
V | |
| Emitter collector voltage |
VECO |
7 |
V | |
| Collector current |
IC |
20 |
mA | |
| Collector peak current | tP/T = 0.5, tP 10 ms |
ICM |
100 |
mW |
Notes
(1) Tamb = 25, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices (DIP).
TCET1100 Features
• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)VIORM = 848 Vpeak
• Thickness through insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)VIORM = 848 Vpeak
• Thickness through insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TCET1100 Typical Application
• switch-mode power supplies
• line receiver
• computer peripheral interface
• microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5.
TCET1100 Connection Diagram
TCET1100G General Description
Optocoupler, Phototransistor Output, High Temperarure
TCET1100G Maximum Ratings
| Coupler | ||||
| Parameter | Test condition |
Symbol |
Value |
Unit |
| Isolation test voltage (RMS) | t = 1 min |
VISO |
5000 |
VRMS |
| Operating ambient temperature range |
Tamb |
- 40 to + 100 |
||
| Storage temperature range |
Tstg |
- 55 to + 125 |
||
| Soldering temperature | 2 mm from case, 10 s |
Tsld |
260 |
|
| Input | ||||
| Reverse voltage |
VR |
6 |
V | |
| Forward current |
IF |
60 |
mA | |
| Forward surge current | tp 10 s |
IFSM |
1.5 |
mA |
| Output | ||||
| Collector emitter voltage |
VCEO |
20 |
V | |
| Emitter collector voltage |
VECO |
7 |
V | |
| Collector current |
IC |
20 |
mA | |
| Collector peak current | tP/T = 0.5, tP 10 ms |
ICM |
100 |
mW |
Notes
(1) Tamb = 25, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices (DIP).
TCET1100G Features
• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)VIORM = 848 Vpeak
• Thickness through insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)VIORM = 848 Vpeak
• Thickness through insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TCET1100G Typical Application
• switch-mode power supplies
• line receiver
• computer peripheral interface
• microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5.
TCET1100G Connection Diagram
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