TCED2100

Isolation Voltage : 5000 Vrms
Packaging : Tube
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Maximum Power Dissipation : 250 mW
Input Type : DC
Maximum Forward Diode Voltage : 1.4 V
Maximum Collector Emitter Saturation Voltage : 1 V
Package / Case : PDIP-8
Maximum Collector Emitter Voltage : 35 V
Current Transfer Ratio : 800 %
Maximum Collector Current : 80 mA


Features:

• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 175
• Rated impulse voltage (transient overvoltage) V_IOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
• Rated isolation voltage (RMS includes DC) V_IOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) V_IORM = 848 V peak
• Thickness though insulation 0.75 mm
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V
according to DIN EN 60747-5-5.




Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
INPUT
Reverse voltage		VR	6	V
Forward current		IF	60	mA
Forward surge current	tp 10 s	IFSM	1.5	A
Power dissipation		Pdiss	100	mW
Junction temperature		Tj	125	°C
OUTPUT
Collector emitter voltage		VCEO	35	V
Emitter collector voltage		VECO	7	V
Collector current		IC	80	mA
Collector peak current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Power dissipation		Pdiss	150	mW
Junction temperature		Tj	125	°C
COUPLER
Isolation test voltage (RMS)	t = 1 min	VISO	5000	VRMS
Total power dissipation		Ptot	250	mW
Operating ambient temperature range		Tamb	- 40 to + 100	°C
Storage temperature range		Tstg	- 55 to + 125	°C
Soldering temperature (2)	2 mm from case, t 10 s	Tsld	260	°C

Notes
(1) T_amb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for throught hole devices.

Description

The TCED2100/TCED4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting package.

The elements of TCED2100/TCED4100 are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.