TCED1100G

Isolation Voltage : 5000 Vrms
Packaging : Tube
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Maximum Power Dissipation : 250 mW
Input Type : DC
Maximum Forward Diode Voltage : 1.4 V
Package / Case : PDIP-4
Maximum Collector Emitter Saturation Voltage : 1 V
Maximum Collector Emitter Voltage : 35 V
Maximum Collector Current : 80 mA
Current Transfer Ratio : 8 %


Features:

• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Available in single or four channels
• Rated impulse voltage (transient overvoltage) V_IOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) V_pd = 1.6 kV peak
• Rated isolation voltage (RMS includes DC) V_IOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) V_IORM = 600 VRMS (848 V peak)
• Thickness though insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: C_TI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5




Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
Reverse voltage		VR	6	V
Forward current		IF	60	mA
Forward surge current	tp 10 s	IFSM	1.5	A
Power dissipation		Pdiss	100	mW
Junction temperature		Tj	125
Collector emitter voltage		VCEO	35	V
Emitter collector voltage		VECO	7	V
Collector current		IC	80	mA
Collector peak current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Power dissipation		Pdiss	150	mW
Junction temperature		Tj	125
Isolation test voltage (RMS)		VISO	5000	VRMS
Total power dissipation		Ptot	250	W
Operating ambient temperature range		Tamb	- 40 to + 100
Storage temperature range		Tstg	- 55 to + 125
Soldering temperature	2 mm from case, t 10 s	Tsld	260

Description

The TCED1100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

The elements of TCED1100 are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.