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TCECTS1, TCED1100, TCED1100G

TCECTS1, TCED1100, TCED1100G Selling Leads, Datasheet

MFG:SGS THOMAS  Package Cooled:SOP  D/C:7

TCECTS1, TCED1100, TCED1100G Picture

TCECTS1, TCED1100, TCED1100G Datasheet download

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Part Number: TCECTS1

 

MFG: SGS THOMAS

Package Cooled: SOP

D/C: 7

 

 

 
 
 
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About TCED1100

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Datasheet: TCED1100

File Size: 212951 KB

Manufacturer: VISAY [Vishay Siliconix]

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  • Vendor: ST Pack: SOP D/C: 09+& Qty: 4856  Adddate: 2024-05-01
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About TCED1100

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Datasheet: TCED1100

File Size: 212951 KB

Manufacturer: VISAY [Vishay Siliconix]

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About TCED1100G

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Datasheet: TCED1100G

File Size: 151879 KB

Manufacturer: VISAY [Vishay Siliconix]

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TCED1100 General Description

Optocoupler, Phototransistor Output, High Gain

TCED1100 Maximum Ratings

Parameter
TestConditions
Symbol
Value
Unit
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
tp 10 s
Tamb 25
VR
IF
IFSM
PV
Tj
6
60
1.5
100
125
V
mA
A
mW

TCED1100 Features

Approvals:
` BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402
` FIMKO (SETI): EN 60950,
Certificate number 11992
` Underwriters Laboratory (UL) 1577 recognized,
file number E-76222 Double Protection
` CSA (CUL) 1577 recognized,
file number E-76222 Double Protection
` VDE 0884, Certificate number 115667
VDE 0884 related features:
` Rated impulse voltage (transient overvoltage)
VIOTM = 8 kV peak
` Isolation test voltage
(partial discharge test voltage) Vpd = 1.6 kV
` Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
` Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
` Creepage current resistance according to
VDE 0303/IEC 112
Comparative Tracking Index: CTI . 175
` Thickness through insulation . 0.75 mm
` Internal creepage distance > 4 mm
General features:
` Isolation materials according to UL94-VO
` Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
` Climatic classification 55/100/21 (IEC 68 part 1)
` Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection
` Low temperature coefficient of CTR
` G = Leadform 10.16 mm;
provides creepage distance > 8 mm,
for TCED2100/ TCED4100 optional;
suffix letter 'G' is not marked on the optocoupler
` Coupling System U

TCED1100 Typical Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
` For appl. class I IV at mains voltage 3 300 V
` For appl. class I III at mains voltage 3 600 V
according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface.

TCED1100G General Description

The TCED1100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.

The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.

TCED1100G Maximum Ratings

PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage  
VR
6
V
Forward current  
IF
60
mA
Forward surge current tp 10 s
IFSM
1.5
A
Power dissipation  
Pdiss
100
mW
Junction temperature  
Tj
125
Collector emitter voltage  
VCEO
35
V
Emitter collector voltage  
VECO
7
V
Collector current  
IC
80
mA
Collector peak current tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation  
Pdiss
150
mW
Junction temperature  
Tj
125
Isolation test voltage (RMS)  
VISO
5000
VRMS
Total power dissipation  
Ptot
250
W
Operating ambient temperature range  
Tamb
- 40 to + 100
Storage temperature range  
Tstg
- 55 to + 125
Soldering temperature 2 mm from case, t 10 s
Tsld
260

TCED1100G Features

• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Available in single or four channels
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 600 VRMS (848 V peak)
• Thickness though insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TCED1100G Typical Application

• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5

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