TCET1109G, TCET1110, TCET1110G Selling Leads, Datasheet
MFG:VISHAY Package Cooled:DIP-4/5K D/C:02+
TCET1109G, TCET1110, TCET1110G Datasheet download
Part Number: TCET1109G
MFG: VISHAY
Package Cooled: DIP-4/5K
D/C: 02+
TCET1109G, TCET1110, TCET1110G
- Table of contents:
Info of TCET1109G
Info of TCET1110
Info of TCET1110G
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About TCET1109G
PDF/DataSheet Download
Datasheet: TCET1109G
File Size: 268935 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
About TCET1110
PDF/DataSheet Download
Datasheet: TCET1110
File Size: 275072 KB
Manufacturer: Vishay Siliconix
Download : Click here to Download
About TCET1110G
PDF/DataSheet Download
Datasheet: TCET1110G
File Size: 275072 KB
Manufacturer: Vishay Siliconix
Download : Click here to Download
TCET1109G General Description
Optocoupler, Phototransistor Output, High Temperarure
TCET1110 General Description
The TCET1110/ TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements.
TCET1110 Maximum Ratings
| PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
|
INPUT |
|
|
|
|
|
Reverse voltage |
|
VR |
6 |
V |
|
Forward current |
|
IF |
60 |
mA |
|
Forward surge current |
tP 10 µs |
IFSM |
1.5 |
A |
|
OUTPUT |
|
|
|
|
|
Collector emitter voltage |
|
VCEO |
70 |
V |
|
Emitter collector voltage |
|
VECO |
7 |
V |
|
Collector current |
|
IC |
50 |
mA |
|
Collector peak current |
tP/T = 0.5, tP 10 ms |
ICM |
100 |
mA |
|
COUPLER |
|
|
|
|
|
Isolation test voltage (RMS) |
t = 1 min |
VISO |
5000 |
VRMS |
|
Operating ambient temperature range |
|
Tamb |
- 40 to + 110 |
|
|
Storage temperature range |
|
Tstg |
- 55 to + 125 |
|
|
Soldering temperature |
2 mm from case, 10 s |
Tsld |
260 |
Note
Tamb = 25 , unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
TCET1110 Features
• CTR offered in 9 groups
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
• Low temperature coefficient of CTR
• Temperature range - 40 to + 110
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 peak
• Creepage current resistance according to VDE 0303/ IEC 60112 Comparative Tracking Index: CTI 175
• Thickness through insulation 0.75 mm
• External creepage distance > 8 mm
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TCET1110 Typical Application
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V
according to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending.
TCET1110G General Description
The TCET1110/ TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements.
TCET1110G Maximum Ratings
| PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
|
INPUT |
|
|
|
|
|
Reverse voltage |
|
VR |
6 |
V |
|
Forward current |
|
IF |
60 |
mA |
|
Forward surge current |
tP 10 µs |
IFSM |
1.5 |
A |
|
OUTPUT |
|
|
|
|
|
Collector emitter voltage |
|
VCEO |
70 |
V |
|
Emitter collector voltage |
|
VECO |
7 |
V |
|
Collector current |
|
IC |
50 |
mA |
|
Collector peak current |
tP/T = 0.5, tP 10 ms |
ICM |
100 |
mA |
|
COUPLER |
|
|
|
|
|
Isolation test voltage (RMS) |
t = 1 min |
VISO |
5000 |
VRMS |
|
Operating ambient temperature range |
|
Tamb |
- 40 to + 110 |
|
|
Storage temperature range |
|
Tstg |
- 55 to + 125 |
|
|
Soldering temperature |
2 mm from case, 10 s |
Tsld |
260 |
Note
Tamb = 25 , unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
TCET1110G Features
• CTR offered in 9 groups
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
• Low temperature coefficient of CTR
• Temperature range - 40 to + 110
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 peak
• Creepage current resistance according to VDE 0303/ IEC 60112 Comparative Tracking Index: CTI 175
• Thickness through insulation 0.75 mm
• External creepage distance > 8 mm
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TCET1110G Typical Application
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V
according to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending.
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