MFG:Triquint Semiconductor Inc Category:RF and RFID D/C:N/A
TGA2513-EPU, TGA2600, TGA2904-1 Datasheet download
Category: RF and RFID
MFG: Triquint Semiconductor Inc
Package Cooled:
D/C: N/A
Description: AMP X-BAND ULTRA 6-12GHZ LNA
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PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TGA1045
File Size: 239914 KB
Manufacturer: TRIQUINT [TriQuint Semiconductor]
Download : Click here to Download
The TriQuint TGA2513-EPU is a compact LNA/Gain Block MMIC with AGC via the control gate. The LNA operates from 2-23 GHz and is designed using TriQuint's proven standard 0.15 um gate pHEMT production process.
The TGA2513-EPU provides a nominal 16 dBm of output power at 1 dB gain compression with a small signal gain of 17 dB. Typical noise figure is < 3 dB from 2-18 GHz.
The TGA2513-EPU is suitable for a variety of wideband electronic warfare systems such as radar warning receivers,electronic counter measures,decoys, jammers and phased array systems.
The TGA2513-EPU is 100% DC and RF tested on-wafer to ensure performance compliance.
| SYMBOL | PARAMETER 1/ | VALUE | NOTES |
| V+ | Positive Supply Voltage | 7 V | 2/ |
| Vg1 | Gate 1 Supply Voltage Range | -2V TO 0 V | |
| Vg2 | Gate 2 Supply Voltage Range | -0.5 V TO +3.5 V | |
| I+ | Positive Supply Current | 151 mA | 2/ |
| | IG | | Gate Supply Current | 10 mA | |
| PIN | VInput Continuous Wave Power | 21 dBm | 2/ |
| PD | Power Dissipation | 1.5 W | 2/, 3/ |
| TCH | Operating Channel Temperature | 117 | 4/ 5/ |
| TM | Mounting Temperature (30 Seconds) |
320 | |
| TSTG | Storage Temperature | -65 to 117 |
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
5/ These ratings apply to each individual FET.
| Technical/Catalog Information | TGA2600 |
| Vendor | Triquint Semiconductor Inc |
| Category | RF and RFID |
| Function | Amplifier |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TGA2600 TGA2600 |
The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates from 7-11 GHz with a typical mid-band noise figure of 0.7 dB.
The device features 30dB of gain across the band, while providing a nominal output power at P1dB gain compression of 2 dBm. Typical input and output return loss is 12 dB.
Ground is provided to the circuitry through vias to the backside metallization.
The TGA2600-EPU LNA is suitable for a variety of C and X band applications such as radar receivers, electronic counter measures,decoys, jammers, and phased array systems.
The TGA2600-EPU is 100% DC and RF tested on-wafer to ensure performance compliance.
Lead-free and RoHS compliant.
| Symbol | Parameter | Value | Notes |
| V+ | Positive Supply Voltage | 4.5 V | 2/ |
| Vg | Gate Supply Voltage Range | -2V to +1 V | |
| I+ | Positive Supply Current | 50 mA | 2/ |
| | Ig | | Gate Supply Current | 2 mA | |
| PIN | Input Continuous Wave Power | TBD | 2/ |
| PD | Power Dissipation | 0.23 W | 2/ 3/ |
| TCH | Operating Channel Temperature | 110 °C | 4/ 5/ |
| TM | Mounting Temperature (30 Seconds) |
175 °C | |
| TSTG | Storage Temperature | -65 to 110°C |
1/ These ratings represent the maximum operable values for this device.
2/ Current is defined under no RF drive conditions. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is greater than 1 E+6 hours.
4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
5/ These ratings apply to each individual FET.
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