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TGA4509-EPU, TGA4516, TGA4516-EPU

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Info of TGA4509-EPU
Info of TGA4516
Info of TGA4516-EPU

TGA4509-EPU, TGA4516, TGA4516-EPU Selling Leads, Datasheet

MFG:Triquint Semiconductor Inc Category:RF and RFID D/C:09+

TGA4509-EPU, TGA4516, TGA4516-EPU Picture

TGA4509-EPU, TGA4516, TGA4516-EPU Datasheet download

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Part Number: TGA4509-EPU

Category: RF and RFID

MFG: Triquint Semiconductor Inc

Package Cooled:

D/C: 09+

Description: AMP KA-BAND 30-40GHZ 2W HPA

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TGA4509-EPU Maximum Ratings

Symbol	Parameter	Value	Notes
V⁺	Positive Supply Voltage	7 V
V^-	Negative Supply Voltage Range	-5 V to 0 V
\|Ig\|	Gate Supply Current	35.2 mA
I⁺	Positive Supply Current	930 mA	2/, 5/
P_D	Power Dissipation	TBD
P_IN	Input Continuous Wave Power	22 dBm
T_CH	Operating Channel Temperature	150	3/, 4/
T_M	Mounting Temperature (30 Seconds)	320
T_STG	Storage Temperature	-65 to 150

TGA4509-EPU Features

• 22 dB Nominal Gain @ 30 GHz
• 30 dBm Nominal Pout @ P1dB
• 25% PAE @ P1dB
• -10 dB Nominal Return Loss
• Built-in Power Detector
• 0.25-m mmW pHEMT 3MI
• Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA
• Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm
(0.096 x 0.045 x 0.004 in)

TGA4509-EPU Typical Application

• Point to Point Radio
• Point to Multi-point Radio
• LMDS
• Satellite Ground Terminal

TGA4516 Parameters

Technical/Catalog Information	TGA4516
Vendor	Triquint Semiconductor Inc
Category	RF and RFID
Function	Amplifier
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGA4516 TGA4516

TGA4516 General Description

The TriQuint TGA4516 is a High Power MMIC Amplifier for Ka-band applications. The part is designed using TriQuint's 0.15um power pHEMT process. The small chip size is achieved by utilizing TriQuint's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products.

The TGA4516 provides >33 dBm saturated output power, and has typical gain of 18 dB at a bias of 6V and 1050mA (Idq). The current rises to 1.9A under RF drive.

This HPA is ideally suited for many,applications such as Military Radar Systems, Ka-band Sat-Com, and Point-to-Point Radios.

The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance.

TGA4516 Maximum Ratings

SYMBOL	PARAMETER	VALUE	NOTES
V⁺	Positive Supply Voltage	8V	2/
V^-	Negative Supply Voltage Range	-5 TO 0V
I⁺	Positive Supply Current	3 A	2/ 3/
\|I_G\|	Gate Supply Current	85mA	3/
P_IN	Input Continuous Wave Power	267mW
P_D	Power Dissipation	7.8W	2/ 4/
T_CH	Operating Channel Temperature	150	5/ 6/
T_M	Mounting Temperature (30 Seconds)	320
T_STG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of 70 , the median lifeis 1E6 hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it
is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings apply to each individual FET.

TGA4516 Features

• 30 - 40 GHz Bandwidth
• > 33 dBm Nominal Psat @ Pin = 20dBm
• 18 dB Nominal Gain
• Bias: 6 V, 1050 mA Idq
(1.9A under RF Drive)
• 0.15 um 3MI MMW pHEMT Technology
• Chip Dimensions: 2.79 x 2.315 x 0.1 mm
(0.110 x 0.091 x 0.004) in

TGA4516 Typical Application

• Military Radar Systems
• Ka-Band Sat-Com
• Point to Point Radio

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