TH560, TH560321, TH562 Selling Leads, Datasheet
MFG:ST D/C:TO-59
MFG:ST D/C:TO-59
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: TH560
File Size: 79232 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH562
File Size: 83964 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability.
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 70 | V |
VCEO | Collector-Emitter Voltage | 35 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 16 | A |
PDISS | Power Dissipation | 320 | W |
TJ | Junction Temperature | +200 | °C |
TSTG | Storage Temperature | - 65 to +150 | °C |
The SD1731 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications.This device utilizes emitter ballasting for improved ruggedness and reliability
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage | 110 | V |
VCEO | Collector-Emitter Voltage | 55 | V |
VEBO | Emitter-Base Voltage | 4.0 | V |
IC | Device Current | 20 | A |
PDISS | Power Dissipation (Theatsink25°C) | 233 | W |
TJ | Junction Temperature | +200 | °C |
TSTG | Storage Temperature | - 65 to +150 | °C |