MFG:TOSHIBA Package Cooled:BGA D/C:05+
TH58DYG02A2XGP5, TH58NVG1S3AFT05, TH58NVG2S3BTG00-DAH Datasheet download
MFG: TOSHIBA
Package Cooled: BGA
D/C: 05+
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PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH58NVG1S3AFT05
File Size: 377617 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TH50VSF1480
File Size: 1194112 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable andProgrammable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks.The device has a 2112-byte static registers which allow program and read data to be transferredbetween the register and the memory cell array in 2112-byte increments. The Erase operation isimplemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).
The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and datainput / output as well as for command inputs. The Erase and Program operations are automaticallyexecuted making the device most suitable for applications such as solid-state file storage, voicerecording, image file memory for still cameras and other systems which require high-density nonvolatilememory data storage.
| SYMBOL | RATING | VALUE | UNIT |
| VCC | Power Supply Voltage | 0.6 to 4.6 | V |
| VIN | Input Voltage | 0.6 to 4.6 | V |
| VI/O | Input /Output Voltage | 0.6 V to VCC 0.3 V ( 4.6 V) | V |
| PD | Power Dissipation | 0.3 | W |
| TSOLDER | Soldering Temperature (10s) | 260 | °C |
| TSTG | Storage Temperature | -55 to 150 | °C |
| TOPR | Operating Temperature | 0 to 70 | °C |
OrganizationMemory cell allay 2112 64K 8 2Register 2112 8Page size 2112bytesBlock size (128K 4K) bytes
ModesReadResetAuto Page ProgramAuto Block EraseStatus Read
Mode controlSerial inputoutputCommand control
Powersupply VCC 2.7 V to 3.6 V
Program/Erase Cycles 1E5 Cycles(With ECC)
Access timeCell array to register 25 smaxSerial Read Cycle 50 ns min
Operating currentRead (50 ns cycle) 10 mA typ.Program (avg.) 10 mA typ.Erase (avg.) 10 mA typ.Standby 50 A max
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