TIC116M, TIC116N, TIC117 Selling Leads, Datasheet
MFG:BOURNS Package Cooled:TO-220 D/C:08+/09+
TIC116M, TIC116N, TIC117 Datasheet download
Part Number: TIC116M
MFG: BOURNS
Package Cooled: TO-220
D/C: 08+/09+
TIC116M, TIC116N, TIC117
- Table of contents:
Info of TIC116M
Info of TIC116N
Info of TIC117
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About TIC116M
PDF/DataSheet Download
Datasheet: TIC116M
File Size: 114526 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
About TIC116N
PDF/DataSheet Download
Datasheet: TIC116N
File Size: 114526 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
About TIC106
PDF/DataSheet Download
Datasheet: TIC106
File Size: 168968 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
TIC116M Maximum Ratings
| RATING | SYMBOL | VALUE | UNIT | |
| Repetitive peak off-state voltage (see Note 1) |
TIC116D TIC116M TIC116S TIC116N |
VDRM |
400 600 700 800 |
V |
| Repetitive peak reverse voltage | TIC116D TIC116M TIC116S TIC116N |
VRRM | 400 600 700 800 |
V |
| Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 8 | A | |
| Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) | IT(AV) | 5 | A | |
| Surge on-state current (see Note 4) |
ITM | 80 | A | |
| Peak positive gate current (pulse width £ 300 ms) | IGM | 3 | A | |
| Peak gate power dissipation (pulse width £ 300 ms) | PGM | 5 | W | |
| Average gate power dissipation (see Note 5) |
PG(AV) | 1 | W | |
| Operating case temperature range | T C | -40 to +110 | °C | |
| Storage temperature range | Tstg | -40 to +125 | °C | |
| Lead temperature 1.6 mm from case for 10 seconds | T L | 230 | ||
TIC116M Features
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 20 mA
TIC116M Connection Diagram
TIC116N Maximum Ratings
| RATING | SYMBOL | VALUE | UNIT | |
| Repetitive peak off-state voltage (see Note 1) |
TIC116D TIC116M TIC116S TIC116N |
VDRM |
400 600 700 800 |
V |
| Repetitive peak reverse voltage | TIC116D TIC116M TIC116S TIC116N |
VRRM | 400 600 700 800 |
V |
| Continuous on-state current at (or below) 80°C case temperature (see Note 2) |
IT(RMS) | 8 | A | |
| Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) | IT(AV) | 5 | A | |
| Surge on-state current (see Note 4) |
ITM | 80 | A | |
| Peak positive gate current (pulse width £ 300 ms) | IGM | 3 | A | |
| Peak gate power dissipation (pulse width £ 300 ms) | PGM | 5 | W | |
| Average gate power dissipation (see Note 5) |
PG(AV) | 1 | W | |
| Operating case temperature range | T C | -40 to +110 | °C | |
| Storage temperature range | Tstg | -40 to +125 | °C | |
| Lead temperature 1.6 mm from case for 10 seconds | T L | 230 | ||
TIC116N Features
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 20 mA
TIC116N Connection Diagram
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