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TIC108N

Features: 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 1 mASpecifications RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage (see Note 1) TIC108DTIC108MTIC108STIC108N VDRM 400600700800 V Repetitiv...

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TIC108N: Features: 5 A Continuous On-State Current 20 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 1 mASpecifications RATING SYMBOL VALUE UNIT Repetitive p...

TIC108N Data Sheet

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Part Number:
TIC108N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 5 A Continuous On-State Current
20 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max IGT of 1 mA




Specifications

RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
 TIC108D
TIC108M
TIC108S
TIC108N
 VDRM









 400
600
700
800		 V
Repetitive peak reverse voltage TIC108D
TIC108M
TIC108S
TIC108N		 VRRM 400
600
700
800		 V
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
 IT(RMS) 5 A
Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) IT(AV) 3.2 A
Surge on-state current (see Note 4)

 ITM 30 A
Peak positive gate current (pulse width £ 300 s) IGM 0.2 A
Peak gate power dissipation (pulse width £ 300 s) PGM 1.3 W
Average gate power dissipation (see Note 5)


 PG(AV) 0.3 W
Operating case temperature range T C -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds T L 230



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