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TIM1213-2L, TIM1213-4L, TIM1213-5

Table of contents:
Info of TIM1213-2L
Info of TIM1213-4L
Info of TIM1213-5

TIM1213-2L, TIM1213-4L, TIM1213-5 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:Transistor D/C:N/A

TIM1213-2L, TIM1213-4L, TIM1213-5 Picture

TIM1213-2L, TIM1213-4L, TIM1213-5 Datasheet download

Five Points

Part Number: TIM1213-2L

MFG: TOSHIBA

Package Cooled: Transistor

D/C: N/A

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TIM1213-4L Maximum Ratings

Characteristic	Symbol	Unit	Rating
Drain-Source Voltage	V_DS	V	15
Gate-Source Voltage	V_GS	V	-5
Drain Current	I_DS	A	5.2
Total Power Dissipation (T = 25)	P_T	W	30
Channel Temperature	T _ch		175
Storage Temperature	T_stg		-65~175

TIM1213-4L Features

Low intermodulation distortion
-IM₃= -45 dBc at Po = 25 dBm,
-Single carrier level
High power
-P_1dB = 36.5 dBm at 12.7 GHz to 13.2 GHz
High gain
-G_1dB = 7.5 dB at 12.7 GHz to 13.2 GHz
Broad band internally matched
Hermetically sealed package

TIM1213-5 Maximum Ratings

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 )
CHARACTERISTICS	SYMBOL	UNIT	RATING
Drain-Source Voltage	V_DS	V	15
Gate-Source Voltage	V_GS	V	-5
Drain Current	I_DS	A	5.7
Total Power Dissipation (Tc= 25 °C)	P_T	W	30
Channel Temperature	T_ch		175
Storage	T_stg		-65 - +175

TIM1213-5 Features

HIGH POWERT P1dB=37.0dBm at 12.7GHz to 13.2GHz
HIGH GAIN G1dB=7.0dB at 12.7GHz to 13.2GHz
BROAD BAND INTERNALLY MATCHED
HERMETICALLY SEALED PACKAGE

TIM1213-5 Typical Application

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

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