TIM1414-15L, TIM1414-18L, TIM1414-18L-252 Selling Leads, Datasheet
MFG:Toshiba D/C:07+
TIM1414-15L, TIM1414-18L, TIM1414-18L-252 Datasheet download
Part Number: TIM1414-15L
MFG: Toshiba
Package Cooled:
D/C: 07+
TIM1414-15L, TIM1414-18L, TIM1414-18L-252
- Table of contents:
Info of TIM1414-15L
Info of TIM1414-18L
Info of TIM1414-18L-252
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About TIM0910-15L
PDF/DataSheet Download
Datasheet: TIM0910-15L
File Size: 133793 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TIM1414-18L-252
PDF/DataSheet Download
Datasheet: TIM1414-18L-252
File Size: 51549 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
About TIM1414-18L-252
PDF/DataSheet Download
Datasheet: TIM1414-18L-252
File Size: 51549 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
TIM1414-15L Maximum Ratings
|
CHARACTERISTICS |
SYMBOL |
UNIT |
RATING |
| Drain-Source Voltage |
VDS |
V |
15 |
| Gate-Source Voltage |
VGS |
V |
-5 |
| Drain Current |
IDS |
A |
11.5 |
| Total Power Dissipation (Tc= 25 ) |
PT |
W |
60 |
| Channel Temperature |
Tch |
175 | |
| Storage Temperature |
Tstg |
-65 to +175 |
TIM1414-15L Features
· LOWINTERMODULATION DISTORTION IM3=-45 dBc at Pout= 30.0dBm Single Carrier Level
· HIGH POWER P1dB=42.0dBm at 14.0GHz to 14.5GHz
· HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz
· BROADBANDINTERNALLYMATCHEDFET
· HERMETICALLY SEALED PACKAGE
· HIGH POWER P1dB=42.0dBm at 14.0GHz to 14.5GHz
· HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz
· BROADBANDINTERNALLYMATCHEDFET
· HERMETICALLY SEALED PACKAGE
TIM1414-18L Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage Gate-Source Voltage |
VDS VGS |
15 -5 |
V V |
| Drain Current | IDS | 11.5 | A |
| Total Power Dissipation (Tc= 25 ) | PT | 65 | W |
| Channel Temperature | Tch | 175 | |
| Storage | TSTG | -65 to +175 |
TIM1414-18L Features
· HIGH POWER
P1dB=42.5dBm at 14.0GHz to 14.5GHz
· HIGH GAIN
G1dB=6.0dB at 14.0GHz to 14.5GHz
· LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level
· BROAD BAND INTERNALLY MATCHED FET
· HERMETICALLY SEALED PACKAGE
P1dB=42.5dBm at 14.0GHz to 14.5GHz
· HIGH GAIN
G1dB=6.0dB at 14.0GHz to 14.5GHz
· LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level
· BROAD BAND INTERNALLY MATCHED FET
· HERMETICALLY SEALED PACKAGE
TIM1414-18L-252 Maximum Ratings
| CHARACTERISTICS | SYMBOL |
UNIT |
RATING |
| Drain-Source Voltage |
VDS |
V |
15 |
| Gate-Source Voltage |
VGS |
V |
-5 |
| Drain Current |
IDS |
A |
11.5 |
| Total Power Dissipation (Tc= 25 °C) |
PT |
W |
60.0 |
| Channel Temperature |
Tch |
175 | |
| Storage |
Tstg |
-65 to +175 |
TIM1414-18L-252 Features
· HIGH POWER
P1dB=42.0dBm at 13.75GHz to 14.5GHz
· HIGH GAIN
G1dB=6.0dB at 13.75GHz to 14.5GHz
· LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level
· BROAD BAND INTERNALLY MATCHED FET
· HERMETICALLY SEALED PACKAGE
P1dB=42.0dBm at 13.75GHz to 14.5GHz
· HIGH GAIN
G1dB=6.0dB at 13.75GHz to 14.5GHz
· LOW INTERMODULATION DISTORTION
IM3(Min.)=−25dBc at Po=36dBm Single Carrier Level
· BROAD BAND INTERNALLY MATCHED FET
· HERMETICALLY SEALED PACKAGE
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