TISP2082L, TISP2150F3, TISP2180L Selling Leads, Datasheet
MFG:Power Innovation Package Cooled:bourns D/C:02
TISP2082L, TISP2150F3, TISP2180L Datasheet download
Part Number: TISP2082L
MFG: Power Innovation
Package Cooled: bourns
D/C: 02
MFG:Power Innovation Package Cooled:bourns D/C:02
TISP2082L, TISP2150F3, TISP2180L Datasheet download
MFG: Power Innovation
Package Cooled: bourns
D/C: 02
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: TISP2082L
File Size: 115589 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TISP2150F3
File Size: 614890 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TISP2180L
File Size: 129131 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
The TISP2082L is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B.
Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
RATING |
SYMBOL |
VALUE |
UNIT |
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) |
ITSP |
150 60 50 38 50 50 45 40 |
A |
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2) |
ITSM |
10 |
A rms |
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A |
diT/dt |
250 |
A/µs |
Junction temperature |
TJ |
150 |
°C |
Operating free - air temperature range |
0 to 70 |
°C | |
Storage temperature range |
Tstg |
-40 to +150 |
°C |
Lead temperature 1.5 mm from case for 10 s |
Tlead |
260 |
°C |
These medium voltage dual symmetrical transient voltage suppressor devices are designed to protect ISDN and telecommunication applications with battery backed ringing against transients caused by lightning strikes and a.c. power lines. Offered in three voltage variants to meet battery and protection requirements they are guaranteed to suppress and withstand the listed international lightning surges in both polarities. Transients are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover controland are virtually transparent to the system in normal operation
The small-outline 8-pin assignment has been carefully chosen for the TISP series to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.
RATING |
SYMBOL |
VALUE |
UNIT | |
Repetitive peak off-state voltage (0°C <TJ < 70°C) |
'2125F3 '2125F3 '2180F3 |
VDRM |
±100 ±120 ±145 |
V |
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) |
ITSP |
350 175 120 60 50 38 50 50 45 35 |
A | |
Non-repetitive peak on-state current (see Notes 2 and 3) 50 Hz, 1 s |
D Package
P Package SL Package |
ITSM |
4
6 6 |
A rms |
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A |
diT/dt |
250 |
A/µs | |
Junction temperature |
TJ |
-40 to +150 |
°C | |
Storage temperature range |
Tstg |
-40 to +150 |
°C |
The TISP2180L is designed specifically fortelephone equipment protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A andB.
Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation.
RATING |
SYMBOL |
VALUE |
UNIT |
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3) 8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs) 5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs) 10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs) |
ITSP |
150
|
A |
Non-repetitive peak on-state current, 50 Hz, 0.7 s (see Notes 1 and 2) |
ITSM |
10 |
A rms |
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A |
diT/dt |
250 |
A/µs |
Junction temperature |
TJ |
150 |
°C |
Operating free - air temperature range |
0 to 70 |
°C | |
Storage temperature range |
Tstg |
-40 to +150 |
°C |
Lead temperature 1.5 mm from case for 10 s |
Tlead |
260 |
°C |